Temperature behavior of an exciton absorption bands in layer semiconductors

机译：层半导体中激子吸收带的温度行为

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The influence of bending waves on the warm-up behavior of exciton absorption bands in layer crystals had been investigated. The effective mass of the current carriers in the layer semiconductor PbI_2 has been computed and used to obtain the values of the exciton-phonon interaction function by pseudopotential method energy spectra calculations. It was shown that the different signs of the warm-up dynamics of an exciton absorptions peak shift and existence of inversion points is related with the concurrent influence fo two exciton energy relaxation mechanisms - on both the bending waves and the lattice phonons.

机译：研究了弯曲波对层状晶体中激子吸收带预热行为的影响。已经计算出层半导体PbI_2中的载流子的有效质量，并通过伪势能能谱计算将其用于获得激子-声子相互作用函数的值。结果表明，激子吸收峰移动的预热动力学的不同迹象和反转点的存在与两种激子能量弛豫机制的同时影响（弯曲波和晶格声子）有关。

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来源
《International Conference on Correlation Optics; 20030916-20030919; Chernivtsi; UA》|2003年|P.242-251|共10页
会议地点 Chernivtsi(UA)
作者
V.M. Kramar; N.K. Kramar; B.M. Nitsowich;
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作者单位

Dept Optics and Spectroscopy, Chemivtsi National University, Ukraine;

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会议组织
原文格式 PDF
正文语种 eng
中图分类应用光学;
关键词
layer crystal; lead iodide; exciton; absorption;

机译：层状晶体碘化铅激子吸收;

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Temperature behavior of an exciton absorption bands in layer semiconductors

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