Growth of InGaN quantum dots on GaN by MOVPE, employing a growth temperature nitrogen anneal

机译：使用生长温度氮退火通过MOVPE在GaN上生长InGaN量子点

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We have studied the growth of InGaN epitaxial layers on GaN by MOVPE (metal-organic vapour phase epitaxy), and have discovered that nanostructures may be formed if a flat epilayer is annealed in molecular nitrogen immediately after growth. The size and density of the nanostructures are shown to be dependent on the growth/anneal temperature. We demonstrated the quantum dot nature of our nanostructures by performing spatially resolved photoluminescence on samples that had been capped with a layer of GaN, grown at the same temperature as the InGaN epilayer. This revealed narrow, delta-function-like lines in the luminescence spectrum with full width at half maximum (FWHM) limited by the resolution of the spectrometer at 4.2 K. Measurement of the FWHM as a function of temperature revealed significant broadening above 20 K.

机译：我们研究了通过MOVPE（金属-有机气相外延）在GaN上生长InGaN外延层，并发现如果生长后立即在分子氮中退火平坦的外延层，则可以形成纳米结构。显示出纳米结构的尺寸和密度取决于生长/退火温度。我们通过在与InGaN外延层相同的温度下生长的，被GaN覆盖的样品上进行空间分辨的光致发光，证明了我们纳米结构的量子点性质。这表明在发光光谱中有狭窄的类似三角函数的线，其中半峰全宽（FWHM）受分光计在4.2 K下的分辨率限制.FWHM作为温度的函数的测量显示在20 K以上显着加宽。

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《International Conference on Nitride Semiconductors(ICNS-5); 20030525-20030530; Nara; JP》|2003年|P.2515-2519|共5页
会议地点 Nara(JP);Nara(JP)
作者
R. A. Oliver; M. J. Kappers; J. H. Rice; J. D. Smith; R. A. Taylor; C. J. Humphreys; G. A. D. Briggs;
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作者单位

Department of Materials, University of Oxford, Parks Road, Oxford, OX1 3PH, UK;

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原文格式 PDF
正文语种 eng
中图分类化合物半导体;
关键词
atomic force microscopy (AFM); quantum dots; III-V semiconductors; quantum dots; chemical vapor deposition (including plasma-enhanced CVD, MOCVD, etc.);

机译：原子力显微镜（AFM）;量子点; III-V半导体;量子点;化学气相沉积（包括等离子体增强CVD，MOCVD等）;

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专利

1. Growth and optical investigation of self-assembled InGaN quantum dots on a GaN surface using a high temperature AlN buffer [J] . Q. Wang, T. Wang, J. Bai, Journal of Applied Physics . 2008,第12期

机译：使用高温AlN缓冲剂在GaN表面上自组装InGaN量子点的生长和光学研究
2. The influence of thermal annealing process after GaN cap layer growth on structural and optical properties of InGaN/InGaN multi-quantum wells [J] . Liu S. T., Yang J., Zhao D. G., Optical Materials . 2018,第Deca期

机译：GaN盖层生长后的热退火工艺对InGaN / InGaN多量子阱的结构和光学性质的影响
3. The influence of thermal annealing process after GaN cap layer growth on structural and optical properties of InGaN/InGaN multi-quantum wells [J] . Liu S. T., Yang J., Zhao D. G., Optical Materials . 2018,第DECa期

机译：GaN盖层生长后的热退火工艺对InGaN / InGaN多量子阱的结构和光学性质的影响
4. Growth of InGaN quantum dots on GaN by MOVPE, employing a growth temperature nitrogen anneal [C] . R. A. Oliver, M. J. Kappers, J. H. Rice, International conference on nitride semiconductors . 2003

机译：MOVPE在GaN上的IngaN量子点的生长，采用生长温度氮气退火
5. Gallium nitride growth by RF-plasma assisted molecular bean epitaxy: Determination of surface stoichiometry by RHEED-TRAXS, annealing of gallium nitride:beryllium and the effects of active nitrogen species, surface polarity, and excess gallium-overpressure on high temperature limits. [D] . VanMil, Brenda. 2005

机译：射频等离子体辅助分子外延生长氮化镓：通过RHEED-TRAXS测定表面化学计量，氮化镓：铍退火以及活性氮种类，表面极性和过量的镓超压对高温极限的影响。
6. Epitaxial Growth of GaN Core and InGaN/GaN MultipleQuantum Well Core/Shell Nanowires on a Thermally Conductive BerylliumOxide Substrate [O] . MuhammadAli Johar, Aadil Waseem, Mostafa Afifi Hassan, 2020

机译：GaN核和InGaN / GaN多重外延生长导热铍上的量子阱核/壳纳米线氧化物基板
7. GaN buffer growth temperature and efficiency of InGaN/GaN quantum wells: The critical role of nitrogen vacancies at the GaN surface [O] . Yao Chen, Camille Haller, Wei Liu, 2021

机译：GaN缓冲增长温度和Ingan / GaN量子阱的效率：氮空位在GaN表面的关键作用

Growth of InGaN quantum dots on GaN by MOVPE, employing a growth temperature nitrogen anneal

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