Optical properties of undoped AlN/GaN superlattices grown by metalorganic vapor phase epitaxy

机译：金属有机气相外延生长非掺杂AlN / GaN超晶格的光学性质

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We report on a study of the optical properties of undoped AlN/GaN superlattices by means of spectro-scopic ellipsometry and photo- and cathodoluminescence. The effect of well and barrier thicknesses on the superlattice transition energies has been studied. Model calculations of the SL miniband structure are performed to compare theoretical predictions with the experimentally determined values of the transition energies.

机译：我们报道了通过光谱椭圆偏光法以及光和阴极发光对未掺杂的AlN / GaN超晶格的光学性质的研究。研究了阱和势垒厚度对超晶格过渡能的影响。进行SL微型频带结构的模型计算，以将理论预测值与实验确定的跃迁能量值进行比较。

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《International Conference on Nitride Semiconductors(ICNS-5); 20030525-20030530; Nara; JP》|2003年|P.2614-2617|共4页
会议地点 Nara(JP);Nara(JP)
作者
V. Darakchieva; P. P. Paskov; M. Schubert; T. Paskova; B. Monemar; S. Kamiyama; M. Iwaya; H. Amano; I. Akasaki;
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Department of Physics and Measurement Technology, Linkoeping University, S-581 83 Linkoeping, Sweden;

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原文格式 PDF
正文语种 eng
中图分类化合物半导体;
关键词
optical constants (including refractive index, complex dielectric constant, absorption, reflection and transmission coefficients, emissivity); III-V semiconductors; III-V semiconductors;

机译：光学常数（包括折射率，复介电常数，吸收，反射和透射系数，发射率）; III-V类半导体; III-V类半导体;

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专利

1. High-electron-mobility AlGaN/AlN/GaN heterostructures grown on 100-mm-diam epitaxial AlN/sapphire templates by metalorganic vapor phase epitaxy [J] . Miyoshi M, Ishikawa H, Egawa T, Applied Physics Letters . 2004,第10期

机译：通过金属有机气相外延生长在直径为100 mm的外延AlN /蓝宝石模板上的高电子迁移率AlGaN / AlN / GaN异质结构
2. Optical Properties and Recombination Mechanisms in GaN and GaN:Mg Grown by Metalorganic Vapor Phase Epitaxy [J] . G.P. YABLONSKII, A.L GURSKII, E.V. LUTSENKO Journal of Electronic Materials . 1998,第1a6期

机译：金属有机气相外延生长的GaN和GaN：Mg的光学性质和复合机理
3. Optical Properties and Recombination Mechanisms in GaN and GaN:Mg Grown by Metalorganic Vapor Phase Epitaxy [J] . G.P. YABLONSKII, A.L. GURSKII, E.V. LUTSENKO Journal of Electronic Materials . 1998,第4期

机译：金属有机气相外延生长的GaN和GaN：Mg中的光学性质和复合机理
4. Optical properties of undoped AlN/GaN superlattices grown by metalorganic vapor phase epitaxy [C] . V. Darakchieva, P. P. Paskov, M. Schubert, International conference on nitride semiconductors . 2003

机译：由金属机会气相外延生长的未掺杂ALN / GAN超晶格的光学性质
5. Phase Stability and Ferromagnetism in Thin Film InMnSb Multi-Phase Semiconductor Alloys Grown by Metalorganic Vapor Phase Epitaxy [D] . Feeser, Caitlin Elizabeth. 2012

机译：金属有机气相外延生长的薄膜InMnSb多相半导体合金的相稳定性和铁磁性
6. Structural and Stress Properties of AlGaN Epilayers Grown on AlN-Nanopatterned Sapphire Templates by Hydride Vapor Phase Epitaxy [O] . Chi-Tsung Tasi, Wei-Kai Wang, Sin-Liang Ou, 2018

机译：氢化物气相外延生长在AlN纳米图案蓝宝石模板上的AlGaN外延层的结构和应力特性
7. Near infrared absorption and room temperature photovoltaic response in AlN/GaN superlattices grown by metal-organic vapor-phase epitaxy [O] . Baumann, Esther, Giorgetta, Fabrizio R., Hofstetter, Daniel, 2008

机译：金属有机气相外延生长的AlN / GaN超晶格中的近红外吸收和室温光伏响应

Optical properties of undoped AlN/GaN superlattices grown by metalorganic vapor phase epitaxy

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