Optical properties of ZnGeN_2 epitaxial layer

机译：ZnGeN_2外延层的光学性质

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Reflectance spectra of a ZnGeN_2 epitaxial layer have been measured by using synchrotron radiation in the photon energy range of 2 to 120 eV. The peak of the reflectance spectra shifts to low energy by changing the direction of the electric vector. The optical constants including the complex index of refraction and the complex dielectric constant were determined on the basis of the Kramers-Kronig analysis for the first time. The refractive index n calculated from the reflectance spectra agrees with that measured by ellipso-metry. For the imaginary part of the dielectric constant ε_2, comparing the peak position of experimental and theoretical spectra, there is agreement between both sets of data. The anisotropy of the optical properties was investigated.

机译：ZnGeN_2外延层的反射光谱已通过使用2至120 eV光子能量范围内的同步加速器辐射进行了测量。通过改变电矢量的方向，反射光谱的峰值将变为低能量。首次基于Kramers-Kronig分析确定包括复数折射率和复数介电常数的光学常数。由反射光谱计算出的折射率n与通过椭圆光度法测得的折射率一致。对于介电常数ε_2的虚部，比较实验光谱和理论光谱的峰值位置，两组数据之间存在一致性。研究了光学性质的各向异性。

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来源
《International Conference on Nitride Semiconductors(ICNS-5); 20030525-20030530; Nara; JP》|2003年|P.2890-2893|共4页
会议地点 Nara(JP);Nara(JP)
作者
Takao Misaki; Akihiro Wakahara; Hiroshi Okada; Akira Yoshida;
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作者单位

Toyohashi University of Technology, Toyohashi 441-8580, Japan;

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会议组织
原文格式 PDF
正文语种 eng
中图分类化合物半导体;
关键词
optical constants (including refractive index, complex dielectric constant, absorption, reflection and transmission coefficients, emissivity); semiconductors; other semiconductors; chemical vapor deposition (including plasma-enhanced CVD, MOCVD, etc.);

机译：光学常数（包括折射率，复介电常数，吸收率，反射和透射系数，发射率）;半导体;其他半导体;化学气相沉积（包括等离子体增强CVD，MOCVD等）;

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Optical properties of ZnGeN_2 epitaxial layer

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