Smart Cut~(TM) SiCOI wafers for MBE GaN epitaxy

机译：用于MBE GaN外延的Smart Cut〜（TM）SiCOI晶片

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The Smart Cut~(TM) technology, now recognised as the technology of choice for the manufacturing of SOI substrates (Silicon On Insulator) [G. G. Shahidi, IBM J. Res. & Dev. 46, No. 2/3 (March and May 2002)], has got the unique potential to propose high quality Compound Semiconductors On Silicon (CSOS) substrates as a complementary technology to epitaxy. The use of this technology has led to the development of SiCOI (SiC On Insulator) structures where a thin film of single SiC crystal is bonded onto an oxidized substrate such as, for instance, a silicon substrate [L. Di Cioccio et al., Mater. Sci. Eng. B 46, 349 (1997)]. In this paper, we present the recent developments of SiCOI substrates developed using the Smart Cut~(TM) technology as well as the first results of GaN epitaxy performed onto these new structures. As a proof of concept and demonstration of feasibility, a Molecular Beam Epitaxy (MBE) GaN layer has been grown onto SiCOI substrate small samples and has been compared with similar growth on SiC bulk substrate.

机译：Smart Cut〜（TM）技术现已被公认是制造SOI衬底（绝缘体上硅）的首选技术。 G. Shahidi，IBM J. Res。和开发。 [第46页，第2/3号（2002年3月和2002年5月）]具有提出高品质硅基复合半导体（CSOS）衬底作为外延技术的补充技术的独特潜力。该技术的使用导致了SiCOI（绝缘体上的SiC）结构的开发，其中单SiC晶体的薄膜粘结到了氧化的衬底（例如硅衬底）上。 Di Cioccio等，Mater。科学。 B 46，349（1997）]。在本文中，我们介绍了使用Smart Cut〜（TM）技术开发的SiCOI衬底的最新进展，以及在这些新结构上进行的GaN外延的第一个结果。作为概念的证明和可行性的证明，分子束外延（MBE）GaN层已在SiCOI衬底小样品上生长，并已与SiC块状衬底上的类似生长进行了比较。

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《International Conference on Nitride Semiconductors(ICNS-5); 20030525-20030530; Nara; JP》|2003年|P.2103-2106|共4页
会议地点 Nara(JP);Nara(JP)
作者
F. Letertre; J. Brault; I. Matko; F. Enjalbert; E. Bellet-Amalric; G. Feuillet; C. Richtarch; B. Faure; L. DiCioccio; R. Madar; B. Daudin; E. Monroy;
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SOITEC S.A. Parc Technologique des Fontaines, 38926 Crolles cedex, France;

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原文格式 PDF
正文语种 eng
中图分类化合物半导体;
关键词
thin film structure and morphology; methods of deposition of films and coatings; film growth and epitaxy;

机译：薄膜的结构和形态；薄膜和涂层的沉积方法；薄膜的生长和外延;

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3. Transfers of 2-inch GaN films onto sapphire substrates using Smart Cut/sup TM/ technology [J] . Tauzin A., Akatsu T., Rabarot M., Electronics Letters . 2005,第11期

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4. Smart Cut~(TM) SiCOI wafers for MBE GaN epitaxy [C] . F. Letertre, J. Brault, I. Matko, International conference on nitride semiconductors . 2003

机译：智能切割〜（TM）Sicoi晶片用于MBE GAN外延
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Smart Cut~(TM) SiCOI wafers for MBE GaN epitaxy

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