Shallow donors in GaN

机译：GaN中的浅施主

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High-resolution, variable temperature PL experiments were performed in the spectral region associated with recombination processes involving the ground and excited states of the neutral donor bound excitons. High-resolution infrared measurements in combination with high-sensitive SIMS unambiguously identified Si and O shallow donors and yield their ground state binding energies. These binding energies are in excellent agreement with values obtained by the analysis of the two-electron-satellite PL spectra considering the participation of ground and excited state donor bound excitons. This work clarifies conflicting aspects existing in donor identification and the binding energies of the impurities and excitons.

机译：在与涉及中性供体结合的激子的基态和激发态的重组过程相关的光谱区域中进行了高分辨率，可变温度的PL实验。高分辨率红外测量结合高灵敏度的SIMS可以明确识别出Si和O浅施主，并产生其基态结合能。考虑到基态和激发态供体结合的激子的参与，这些结合能与通过分析两个电子卫星PL光谱获得的值非常一致。这项工作澄清了供体鉴定中存在的矛盾方面以及杂质和激子的结合能。

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来源
《International Conference on Nitride Semiconductors(ICNS-5); 20030525-20030530; Nara; JP》|2003年|P.330-336|共7页
会议地点 Nara(JP);Nara(JP)
作者
J. A. Freitas; Jr.; W. J. Moore; B. V. Shanabrook; G. C. B. Braga; D. D. Koleske; S. K. Lee; S. S. Park; J. Y. Han;
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Naval Research Laboratory, Washington, DC 20375, USA;

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原文格式 PDF
正文语种 eng
中图分类化合物半导体;
关键词
excitons and related phenomena; III-V semiconductors; III-V and II-VI semiconductors; III-V semiconductors; III-V semiconductors;

机译：激子和相关现象; III-V半导体; III-V和II-VI半导体; III-V半导体; III-V半导体;

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专利

1. Optically detected magnetic resonance of shallow donor - shallow acceptor and deep (2.8-3.2 eV) recombination from Mg-doped GaN [J] . E. R. Glaser, T. A. Kennedy, J. A. Freitas Jr., Physica, B. Condensed Matter . 1999,第0期

机译：光学检测的浅施主-浅受主和掺杂Mg的GaN的深（2.8-3.2 eV）重组
2. Study on shallow donor-type impurities of GaN epilayer regrown by epitaxial lateral overgrowth technique [J] . Wenxin Tang, Fu Chen, Li zhang, Applied Physics Letters . 2021,第1期

机译：随着外延横向过度高血压技术的GaN Epilayer浅供体型杂质研究
3. External Electric Field Effect on Shallow Donor Impurity States in Zinc-Blende InxGa1?xN/GaN Symmetric Coupled Quantum Dots [J] . Guang-Xin Wang, Li-Li Zhang, Huan Wei, Advances in condensed matter physics . 2017,第期

机译：锌 - 闪光型Inxga1的浅供体杂质状态的外部电场效应xN / GaN对称耦合量子点
4. Time-resolved spectroscopy of excitons bound at shallow neutral donors in HVPE GaN [C] . B. Monemar, P.P. Paskov, J.P. Bergman, International Conference on Defects in Semiconductors . 2006

机译：在HVPE GaN中浅中性供体的激子弹的时间分辨光谱
5. Magneto-optical excitations of quantum states of remote shallow donors. [D] . Naweed, Ahmer. 2002

机译：远程浅施主的量子态的磁光激发。
6. On the Modeling of the Donor/Acceptor Compensation Ratio in Carbon-Doped GaN to Univocally Reproduce Breakdown Voltage and Current Collapse in Lateral GaN Power HEMTs [O] . Nicolò Zagni, Alessandro Chini, Francesco Maria Puglisi, 2021

机译：关于碳掺杂GaN中供体/受体补偿比的建模在横向GaN功率Hemts中的单一再现击穿电压和电流塌陷
7. Dielectric mismatch and shallow donor impurities in GaN/HfO2 quantum wells [O] . Pereira, T. A. S., Sousa, A. A., Degani, M. H., 2014

机译：GaN / HfO2量子中的介电失配和浅施主杂质井

Shallow donors in GaN

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