Schottky barrier heights of Au, Pd and Ni on n-GaN evaluated using mesa-structure diodes

机译：使用台面结构二极管评估了n-GaN上Au，Pd和Ni的肖特基势垒高度

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We investigated the Schottky characteristics of Au, Pd and Ni on n-GaN using capacitance-voltage and current-voltage measurements for mesa-structure diodes. Even though these metals have a similar metal work function of around 5.1 eV, their Schottky barrier heights are considerably different each other. The obtained Schottky barrier heights are 0.96, 1.50 and 1.34 eV for Au, Pd and Ni, respectively. The high Schottky barrier height for Pd is preferable for the gate metal in a field effect transistor and the ohmic metal for p-type nitride semiconductor. Although the work function difference between Au and Pd is just 0.02 eV, the barrier height difference is as high as 0.54 eV, meaning that the interfacial reaction between these metals and GaN or the Fermi-level pinning mechanism is quite different.

机译：我们使用台面结构二极管的电容电压和电流电压测量，研究了n-GaN上Au，Pd和Ni的肖特基特性。即使这些金属具有约5.1 eV的相似金属功函数，但它们的肖特基势垒高度也有很大不同。对于Au，Pd和Ni，获得的肖特基势垒高度分别为0.96、1.50和1.34 eV。 Pd的高肖特基势垒高度优选用于场效应晶体管中的栅极金属和用于p型氮化物半导体的欧姆金属。尽管Au和Pd的功函数差仅为0.02 eV，但势垒高度差高达0.54 eV，这意味着这些金属与GaN之间的界面反应或费米能级钉扎机制非常不同。

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来源
《International Conference on Nitride Semiconductors(ICNS-5); 20030525-20030530; Nara; JP》|2003年|P.2393-2395|共3页
会议地点 Nara(JP);Nara(JP)
作者
T. Makimoto; M. Kashiwa; T. Kido; N. Matsumoto; K. Kumakura; N. Kobayashi;
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作者单位

NTT Basic Research Laboratories, NTT Corporation, 3-1 Morinosato Wakamiya, Atsugi-shi, Kanagawa 243-0198, Japan;

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原文格式 PDF
正文语种 eng
中图分类化合物半导体;
关键词
electron states at surfaces and interfaces; surface double layers, schottky barriers, and work functions; III-V semiconductors;

机译：表面和界面的电子态;表面双层，肖特基势垒和功函数; III-V族半导体;

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6. Medium Energy Carbon and Nitrogen Ion Beam Induced Modifications in Charge Transport Structural and Optical Properties of Ni/Pd-GaN Schottky Barrier Diodes [O] . Santosh Kumar, Xiang Zhang, Vinay Kumar Mariswamy, 2020

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Schottky barrier heights of Au, Pd and Ni on n-GaN evaluated using mesa-structure diodes

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