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首页> 外文会议>International Conference on Nitride Semiconductors(ICNS-5); 20030525-20030530; Nara; JP >Free-standing HVPE-GaN Layers
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Free-standing HVPE-GaN Layers

机译：独立式HVPE-GaN层

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摘要

We have grown GaN layers with a thickness up to 340 μm in an rf-heated vertical HVPE reactor with a bottom-fed design. The GaN layers were separated from the sapphire substrate by a LLO process. The free-standing GaN was investigated by HRXRD, AFM and low temperature CL. The FWHM values of the ω-scans are 96 and 129 arcsec for the (104) and (002) reflection, respectively, which indicates high crystalline quality. The c and a lattice parameters are determined as c = 0.51850 +- 0.00004 nm and a = 0.31890 +- 0.00004 nm, indicating stress free material. The etch pit density was estimated to be 1 x 10~7 cm~(-2). The used HVPE growth procedure together with the subsequent LLO are obviously capable to provide high-quality free-standing GaN material for further epitaxial overgrowth.
机译：我们在采用底部进料设计的射频加热垂直HVPE反应器中生长了厚度高达340μm的GaN层。通过LLO工艺将GaN层与蓝宝石衬底分离。通过HRXRD，AFM和低温CL研究了独立式GaN。对于（104）和（002）反射，ω扫描的FWHM值分别为96和129 arcsec，这表明高结晶质量。确定c和晶格参数为c ＝ 0.51850±0.00004nm和a ＝ 0.31890±0.00004nm，表明无应力材料。蚀刻坑密度估计为1×10 7 cm 2（-2）。所用的HVPE生长工艺以及随后的LLO显然能够为进一步外延生长提供高质量的自支撑GaN材料。

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