Gain spectra and current-induced change of refractice index in (In/Al)GaN diode lasers

机译：（In / Al）GaN二极管激光器的增益谱和电流引起的折射率变化

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Adapting the Hakki-Paoli method for blue laser diodes we measure gain spectra for (In/Al)GaN on SiC substrate laser diodes in the low carrier density regime. From the measured longitudinal mode spacing we calculate the effective refractive index and can exclude a mode spacing 'anomaly.' We demonstrate that the substrate has a considerable influence on the modal gain.

机译：将Hakki-Paoli方法用于蓝色激光二极管，我们在低载流子密度条件下测量SiC衬底激光二极管上（In / Al）GaN的增益谱。根据测得的纵向模式间距，我们可以计算出有效折射率，并且可以排除模式间距“异常”。我们证明了基板对模态增益有相当大的影响。

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来源
《International Conference on Nitride Semiconductors(ICNS-5); 20030525-20030530; Nara; JP》|2003年|P.143-146|共4页
会议地点 Nara(JP);Nara(JP)
作者
U. T. Schwarz; E. Sturm; W. Wegscheider; V. Kuemmler; A. Lell; V. Haerle;
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作者单位

Angewandte und Experimentelle Physik, Universitaet Regensburg, 93040 Regensburg, Germany;

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原文格式 PDF
正文语种 eng
中图分类化合物半导体;
关键词
semiconductor lasers; laser diodes; efficiency, stability, gain, and other operational parameters; III-V and II-VI semiconductors;

机译：半导体激光器;激光二极管;效率，稳定性，增益和其他工作参数; III-V和II-VI半导体;

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2. Excitonic signature in gain and carrier induced change of refractive index spectra of (In,Al)GaN quantum well lasers [J] . Schwarz UT, Sturm E, Wegscheider W, Applied Physics Letters . 2004,第9期

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3. Anisotropic optical gain in m-plane In_xGa_(1-x)N/GaN multiple quantum well laser diode wafers fabricated on the low defect density freestanding GaN substrates [J] . T. Onuma, K. Okamoto, H. Ohta, Applied Physicsletters . 2008,第9期

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5. Gain spectra and current-induced change of refractice index in (In/Al)GaN diode lasers [C] . U. T. Schwarz, E. Sturm, W. Wegscheider, International conference on nitride semiconductors . 2003

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Gain spectra and current-induced change of refractice index in (In/Al)GaN diode lasers

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