Co-implantation of Mn + N into p-type GaN for high T_C ferromagnetism

机译：Mn + N共注入p型GaN中以实现高T_C铁磁性

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N and Mn ions were co-implanted into p-type GaN and subsequently annealed at 700-900 ℃. The ferromagnetic property was obtained after annealing at 800 ℃. As compared with conventional Mn-implanted samples, Mn-N binary phases significantly decreased, resulting in the reduction of the N vacancies. From synchrotron radiation photoemission spectroscopy, the Ga-Mn magnetic phases, which contributed to the ferromagnetic property, were still observed after annealing at 900 ℃. From these results, we propose the co-implantation of N and Mn atoms to achieve high T_C ferromagnetism in GaN.

机译：将N和Mn离子共注入p型GaN中，然后在700-900℃退火。在800℃退火后获得铁磁性能。与常规的Mn注入样品相比，Mn-N二元相显着减少，导致N空位的减少。同步辐射光电子能谱分析表明，在900℃退火后，仍能观察到有助于铁磁性能的Ga-Mn磁性相。根据这些结果，我们建议共注入N和Mn原子以在GaN中实现高T_C铁磁性。

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《International Conference on Nitride Semiconductors(ICNS-5); 20030525-20030530; Nara; JP》|2003年|P.2878-2881|共4页
会议地点 Nara(JP);Nara(JP)
作者
Jeong Min Baik; Ho Won Jang; Hyun-Joon Shin; Min-Kyu Lee; Yoon Shon; Tae Won Kang; Jong-Lam Lee;
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作者单位

Department of Materials Science and Engineering, Pohang University of Science and Technology (POSTECH), Pohang 790-784, Korea;

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原文格式 PDF
正文语种 eng
中图分类化合物半导体;
关键词
III-V semiconductors; III-V and II-VI semiconductors; III-V semiconductors; magnetic semiconductors;

机译：III-V半导体; III-V和II-VI半导体; III-V半导体;磁性半导体;

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机译：Mn_2V_（0.5）Co_（0.5）Z（Z = Ga，Al）Heusler合金：电弧熔体中高T_c补偿的P型亚铁磁性和熔纺薄带中的N型亚铁磁性
2. Mn_2V_(0.5)Co_(0.5)Z (Z = Ga, Al) Heusler alloys: High T_c compensated P-type ferrimagnetism in arc melted bulk and N-type ferrimagnetism in melt-spun ribbons [J] . Midhunlal P. V, Chelvane J. Arout, Prabhu D., Journal of magnetism and magnetic materials . 2019,第Nova期

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3. Determination of hole-induced ferromagnetic Mn-Mn exchange in p-type Zn1-xMnxTe by inelastic neutron scattering [J] . Kepa H, Van Khoi L, Brown CM, Physica, B. Condensed Matter . 2004,第1a3期

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4. Co-implantation of Mn + N into p-type GaN for high T_C ferromagnetism [C] . Jeong Min Baik, Ho Won Jang, Hyun-Joon Shin, International conference on nitride semiconductors . 2003

机译：高T_C铁磁体Mn + n进入P型GaN的共注入
5. Studies of Ferromagnetic MnAs/GaAs Heterostructures and MnAs/InAs Spin LEDs. [D] . Kwon, Jaesuk. 2013

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6. Enhanced Ferromagnetism in Nanoscale GaN:Mn Wires Grown on GaN Ridges [O] . Ji Cheng, Shengxiang Jiang, Yan Zhang, 2017

机译：GaN脊上生长的纳米级GaN：Mn线中增强的铁磁性
7. High T_C ferromagnetism in diluted magnetic semiconducting GaN:Mn films [O] . Hori, Hidenobu, Sonoda, Saki, Sasaki, Takahiko, 2002

机译：稀磁半导体GaN：Mn薄膜中的高T_C铁磁性

Co-implantation of Mn + N into p-type GaN for high T_C ferromagnetism

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