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首页> 外文会议>International Conference on Silicon Carbide and Related Materials 2001 Pt.1 Oct 28-Nov 2, 2001 Tsukuba, Japan >Polytype Identification and Mapping in Heteroepitaxial Growth of 3C on Atomically Flat 4H-SiC Mesas Using Synchrotron White-Beam X-Ray Topography
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Polytype Identification and Mapping in Heteroepitaxial Growth of 3C on Atomically Flat 4H-SiC Mesas Using Synchrotron White-Beam X-Ray Topography

机译：同步加速器白束X射线形貌在原子平面4H-SiC台面上3C异质外延生长中的多态性鉴定和定位

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摘要

This paper reports the application of synchrotron white beam X-ray topography to the identification and mapping of the polytype distribution in nominally 3C heteroepitaxial films grown on 4H-SiC mesas which, prior to epilayer growth, were subjected to the recently reported procedure for producing atomic flatness. Results from studies carried out on two wafers are presented. The first (wafer 1) , a non-optimal region of one of the 4H-SiC wafers that was described in [1], was subjected to the procedure for production of atomic flatness. The region of interest, experienced imperfect control of the local supersaturation and significant 2D terrace nucleation of the two variants of 3C polytype was inadvertently produced. This sample served to demonstrate the capability for polytype mapping. The second (wafer 2) consisted of a 4H wafer where more controlled heteroepitaxy was carried out following the successful production of the atomically flat mesas. This sample served to demonstrate proof of concept, i.e. to confirm that dislocation-free mesas could be made atomically flat and that complete DPB-free coverage of these atomically flat mesas by one or other of the 3C polytype variants could be achieved. For both crystals, back reflection topographs revealed strain contrast bounding regions that had experienced 3C growth. The apparent mismatch between substrate and epilayer was further investigated using High Resolution Triple-Axis X-ray Diffraction (HRTXD). Preliminary Δa/a and Δc/c values obtained for the epilayers are presented.
机译：本文报道了同步加速器白光X射线形貌在识别和标绘4H-SiC台面上生长的标称3C异质外延膜中多型分布的应用，该膜在外延层生长之前已接受了最近报道的用于生产原子的程序平整度。给出了在两个晶片上进行的研究结果。对第一个晶片（晶片1）（在[1]中描述的一个4H-SiC晶片中的一个非最佳区域）进行生产原子平坦度的过程。意外地产生了感兴趣的区域，局部过饱和的不完美控制以及3C多型体两个变体的明显2D台面成核。该样本用于证明多型映射的功能。第二个（晶圆2）由4H晶圆组成，在成功生产了原子平面台面之后，对其进行了更可控的异质外延。该样本用于证明概念证明，即确认无位错台面可以原子化平坦，并且可以实现一个或其他3C多型变体对这些原子级台面的完全无DPB覆盖。对于这两种晶体，背反射形貌图都显示出应变对比边界区域经历了3C生长。使用高分辨率三轴X射线衍射（HRTXD）进一步研究了基底和外延层之间的表观失配。给出了外延层获得的初步Δa/ a和Δc/ c值。

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