p-3C-SiC-6H-SiC Heterojunctions: Structural and Electrical Characterization

机译：p-3C-SiC / n-6H-SiC异质结：结构和电特性

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Sublimation epitaxy in a vacuum (SEV) has been used to obtain p-3C-SiC-6H-SiC heteroepitaxial structures. Results of a study of epilayers and diode structures on their base are presented. Band discontinuities are determined and a band diagram of the p-3C-SiC-6H-SiC heterostructure is constructed.

机译：真空中的升华外延已经被用于获得p-3C-SiC / n-6H-SiC异质外延结构。提出了基于其的外延层和二极管结构的研究结果。确定能带不连续性并构建p-3C-SiC / n-6H-SiC异质结构的能带图。

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来源
《International Conference on Silicon Carbide and Related Materials 2001 Pt.1 Oct 28-Nov 2, 2001 Tsukuba, Japan》|2001年|p.683-686|共4页
会议地点 Tsukuba(JP);Tsukuba(JP)
作者
A.A. Lebedev; A.M. Strelchuk; D.V. Davydov; N.S. Savkina; A.S. Tregubova; A.N. Kuznetsov; V.A. Soloviev; N.K. Poletaev;
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作者单位

A.F. Loffe Physico-Technical Institute, Polytechnichaskaja 26, RU-194021 St.-Petersburg, Russia;

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会议组织
原文格式 PDF
正文语种 eng
中图分类无线电电子学、电信技术;
关键词
band diagram; exciton; heteropolytype structures; SiC; sublimation epitaxy;

机译：能带图激子异质结构SiC升华外延;

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p-3C-SiC-6H-SiC Heterojunctions: Structural and Electrical Characterization

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