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首页> 外文会议>International Conference on Silicon Carbide and Related Materials 2001 Pt.1 Oct 28-Nov 2, 2001 Tsukuba, Japan >Impurity-Controlled Dopant Activation -The Role of Hydrogen in p-Type Doping of SiC
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Impurity-Controlled Dopant Activation -The Role of Hydrogen in p-Type Doping of SiC

机译：杂质控制的掺杂剂活化-氢在SiC p型掺杂中的作用

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摘要

Hydrogen is a natural contaminant of SiC growth processes, and may influence the doping efficiency. Hydrogen incorporation proportional to that of boron was observed during CVD growth while the amount of hydrogen was two orders of magnitude less than the aluminum concentration. Passivation by complex formation with hydrogen has been proven both for Al and B. The experimentally observed reactivation energy of these complexes differ by 0.9 eV. Our ab initio supercell calculations in 4H-SiC indicate, that in the absence of hydrogen, boron is incorporated as isolated substitutional and prefers the carbon site, while under typical CVD conditions boron is incorporated together with hydrogen (in equal amounts), favoring the silicon site. Therefore, the presence of H is advantageous for the activation of B as a shallow acceptor. In contrast to boron, aluminum is incorporated independently of the presence of hydrogen as isolated substitutional at the silicon site. The calculated difference between the dissociation of the stable dopant plus hydrogen complexes agrees very well with experiments. Vibration frequencies for the dopant complexes have been also calculated.
机译：氢是SiC生长过程的天然污染物，可能会影响掺杂效率。在CVD生长期间观察到与硼成比例的氢结合，而氢的量比铝浓度少两个数量级。 Al和B均已证明通过与氢形成配合物而钝化。实验观察到的这些配合物的再活化能相差0.9 eV。我们在4H-SiC中的从头算超级电池计算表明，在不存在氢的情况下，硼以孤立的取代基形式结合，并且优先考虑碳原子，而在典型的CVD条件下，硼与氢（等量）结合在一起，有利于硅现场。因此，H的存在对于将B激活为浅受体是有利的。与硼相反，铝的引入与氢的存在无关，在硅位置上氢是孤立的取代基。稳定的掺杂物加氢配合物的解离之间的计算差异与实验非常吻合。还已经计算出了掺杂物络合物的振动频率。

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