Homoepitaxial Growth of Cubic Silicon Carbide by Sublimation Epitaxy

机译：升华外延法生长立方碳化硅

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Cubic silicon carbide has enough potential for high power and high frequency devices with low loss. In order to achieve such devices, thick, smooth surface, low-doped and high crystal quality epitaxial layers are needed. In order to obtain such layers, homoepitaxial growth was carried out by sublimation epitaxy on cubic silicon carbide substrates. The surface of cubic silicon carbide layers grown at the growth rate of 42 μm/h was very smooth and comparable to that of α-silicon carbide. The crystal quality of epitaxial layers was better than that of substrates. However, much impurity such as aluminum and nitrogen was observed by the photoluminescence.

机译：立方碳化硅具有足够的潜力，可用于低损耗的大功率和高频设备。为了实现这样的器件，需要厚的，光滑的表面，低掺杂和高晶体质量的外延层。为了获得这样的层，通过升华外延在立方碳化硅衬底上进行同质外延生长。以42μm/ h的生长速度生长的立方碳化硅层的表面非常光滑，与α-碳化硅相当。外延层的晶体质量优于衬底。但是，通过光致发光观察到很多杂质，例如铝和氮。

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来源
《International Conference on Silicon Carbide and Related Materials 2001 Pt.1 Oct 28-Nov 2, 2001 Tsukuba, Japan》|2001年|p.279-282|共4页
会议地点 Tsukuba(JP);Tsukuba(JP)
作者
T. Furusho; T. Miyanagi; Y. Okui; S. Ohshima; S. Nishino;
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作者单位

Department of Electronics and Information Science, Faculty of Engineering and Design, Kyoto Institute of Technology, Matsugasaki, Sakyo-ku, Kyoto 606-8585, Japan;

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会议组织
原文格式 PDF
正文语种 eng
中图分类无线电电子学、电信技术;
关键词
cubic polytype; high growth rate; homoepitaxial growth; sublimation epitaxy;

机译：立方多型;高生长速率;同质外延生长;升华外延;

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专利

1. Bulk crystal growth of cubic silicon carbide by sublimation epitaxy [J] . Tomoaki Furusho, Makoto Sasaki, Satoru Ohshima, Journal of Crystal Growth . 2003,第1a2期

机译：升华外延法生长立方碳化硅块晶
2. Epitaxial growth of cubic silicon carbide on silicon by sublimation method [J] . Xianfeng Feng, Zhiming Chen, Jianping Ma, Optical Materials . 2003,第1a2期

机译：升华法在硅上外延生长立方碳化硅
3. Modeling of the mass transport during the homo-epitaxial growth of silicon carbide by fast sublimation epitaxy [J] . Thomas Hupfer, Philip Hens, Michl Kaiser, Materials science forum . 2013,第期

机译：快速升华外延在碳化硅同质外延生长过程中的传质模型
4. Modeling of the mass transport during the homo-epitaxial growth of silicon carbide by fast sublimation epitaxy [C] . Thomas Hupfer, Philip Hens, Michl Kaiser, European conference on silicon carbide and related materials . 2013

机译：快速升华外延碳化硅同源外延生长的大规模运输建模
5. Sublimation growth of aluminum nitride bulk crystals and high-speed CVD growth of silicon carbide epilayers, and their characterization. [D] . Lu, Peng. 2006

机译：氮化铝块状晶体的升华生长和碳化硅外延层的高速CVD生长及其表征。
6. Annealing-Induced Changes in the Nature of Point Defects in Sublimation-Grown Cubic Silicon Carbide [O] . Michael Schöler, Clemens Brecht, Peter J. Wellmann 2019

机译：退火引起的升华生长立方碳化硅点缺陷性质的变化
7. The role of defects in fluorescent silicon carbide layers grown by sublimation epitaxy [O] . Schimmel Saskia, Kaiser Michl, Jokubavicius Valdas, 2014

机译：通过升华外延生长的荧光碳化硅层中缺陷的作用

Homoepitaxial Growth of Cubic Silicon Carbide by Sublimation Epitaxy

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