Comparison of the Growth Characteristics of SiC on Si between Low-Pressure CVD and Triode Plasma CVD

机译：低压CVD与三极管等离子CVD在Si上SiC的生长特性比较

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In order to investigate the effect of the supply of hydrogen radicals during the SiC growth, SiC films were grown on Si substrates by low-pressure thermal CVD (LPCVD) and triode plasma CVD using dimethylsilane (DMS). Activation energy for the epitaxial growth rate of SiC by LPCVD was estimated to be 73 +- 5kcal/mol, whereas that by triode plasma CVD was about 48+-2 kcal/mol. As in the case of the growth rate of SiC using monomethylsilane (MMS), the activation energy by using the triode plasma CVD was reduced about 25kcal/mol in the case of DMS.

机译：为了研究在SiC生长期间氢自由基的供应的影响，通过低压热CVD（LPCVD）和三极管等离子体CVD使用二甲基硅烷（DMS）在Si衬底上生长SiC膜。通过LPCVD，对于SiC的外延生长速率的活化能估计为73±5kcal / mol，而通过三极管等离子体CVD的活化能为约48 + -2kcal / mol。与使用单甲基硅烷（MMS）的SiC的生长速率相同，在DMS的情况下，通过使用三极管等离子体CVD的活化能降低了约25kcal / mol。

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来源
《International Conference on Silicon Carbide and Related Materials 2001 Pt.1 Oct 28-Nov 2, 2001 Tsukuba, Japan》|2001年|p.367-370|共4页
会议地点 Tsukuba(JP);Tsukuba(JP)
作者
Kanji Yasui; Masahiro Hashiba; Yuzuru Narita; Tadashi Akahane;
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作者单位

Department of Electrical Engineering, Nagaoka University of Technology, 1603-1 Kamitomioka, Nagaoka, Niigata 940-2188, Japan;

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会议组织
原文格式 PDF
正文语种 eng
中图分类无线电电子学、电信技术;
关键词
3C-SiC; dimethysilane; low-pressure CVD; triode plasma CVD;

机译：3C-SiC;二甲基硅烷;低压CVD;三极管等离子体CVD;

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专利

1. Dependence on the RF power of the characteristics of 3C-SiC on Si(001) grown by triode plasma CVD [J] . Kanji Yasui, Masahiro Hashiba, Tadashi Akahane 電子情報通信学会技術研究報告. 電子部品·材料. Component Parts and Materials . 2002,第261期

机译：三极管等离子体CVD生长的Si（001）上3C-SiC特性的RF功率依赖性
2. Dependence on the RF power of the characteristics of 3C-SiC on Si(001) grown by triode plasma CVD [J] . Kanji Yasui, Masahiro Hashiba, Tadashi Akahane 電子情報通信学会技術研究報告. 電子部品·材料. Component Parts and Materials . 2002,第261期

机译：依赖于三极管等离子体CVD生长的3C-SiC特性RF功率的RF功率
3. Low temperature epitaxial growth of 3C-SiC by triode plasma CVD using dimethylsilane and hydrogen [J] . Masahiro Hashiba, Tomohiko Maeda, Kanji Yasui, 電子情報通信学会技術研究報告. 電子部品·材料. Component Parts and Materials . 2001,第395期

机译：使用二甲基硅烷和氢气的三极管等离子体CVD低温外延生长3C-SiC
4. Low Temperature Heteroepitaxial Growth of 3C-SiC on Si Substrates by Rapid Thermal Triode Plasma CVD using Dimethylsilane [C] . Hashim, Abdul Manaf, Yasui, . 2006

机译：利用二甲基硅烷的快速热三极等离子体CVD在Si衬底上低温异质外延生长3C-SiC
5. Nanoengineering of ZnO Electrical and Optical Characteristics by Controlling Its Morphology and Defects via Reaction Kinetics, Fluid Dynamics, and Stoichiometry in Low-Pressure CVD Synthesis. [D] . Lim, Taehoon. 2016

机译：通过在低压CVD合成中通过反应动力学，流体动力学和化学计量控制其形态和缺陷来控制ZnO的电学和光学特性的纳米工程。
6. Epitaxial growth of graphitic carbon on C-face SiC and Sapphire by chemical vapor deposition (CVD) [O] . Jeonghyun Hwang, Virgil B. Shields, Christopher I. Thomas, -1

机译：化学气相沉积（CVD）中C面SiC和蓝宝石上的石墨碳外延生长
7. Heteroepitaxial growth of 3C-SiC on Si substrates by rapid thermal triode plasma CVD using dimethylsilane at low temperature [O] . Hashim Abdul Manaf, Kanji Yasui 2009

机译：在低温下使用二甲基硅烷通过快速热三极等离子体CVD在Si衬底上异质外延生长3C-SiC

Comparison of the Growth Characteristics of SiC on Si between Low-Pressure CVD and Triode Plasma CVD

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