UV Scanning Photoluminescence Spectroscopy Investigation of 6H- and 4H-SiC

机译：6H-和4H-SiC的紫外扫描光致发光光谱研究

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We report on a scanning photoluminescence (SPL) apparatus with UV excitation (244 nm) developed for SiC analysis. Examples of the effectiveness of this technique to characterize SiC are developed. Indeed, we demonstrate that SPL can be used for micropipe and screw dislocation density determination and for polytypes inclusion mapping. The gettering effect of non radiative traps in the vicinity of screw dislocations is evidenced by spectral measurements.

机译：我们报告了开发用于SiC分析的具有UV激发（244 nm）的扫描光致发光（SPL）设备。开发了该技术表征SiC有效性的示例。实际上，我们证明了SPL可用于微管和螺钉脱位密度测定以及多型夹杂物映射。螺旋位错附近的非辐射阱的吸杂效果通过光谱测量证明。

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来源
《International Conference on Silicon Carbide and Related Materials 2001 Pt.1 Oct 28-Nov 2, 2001 Tsukuba, Japan》|2001年|p.601-604|共4页
会议地点 Tsukuba(JP);Tsukuba(JP)
作者
L. Masarotto; J.M. Bluet; G. Guillot;
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作者单位

Laboratoire de Physique de la Matiere, CNRS (UMR 5511), INSA de Lyon-Domaine Scientifique de la Doua, Batiment Blaise Pascal, 7, avenue Jean Capelle, FR-69621 Villeurbanne Cedex, France;

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会议组织
原文格式 PDF
正文语种 eng
中图分类无线电电子学、电信技术;
关键词
dislocations; micropipes; polytypes; scanning photoluminescence;

机译：位错;微管;多型性;扫描光致发光;

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专利

1. Microscopic defects and homogeneity investigations in 4H-SiC epitaxial wafers by UV scanning photoluminescence spectroscopy [J] . El Harrouni I, Bluet JM, Ziane D, The European physical journal. Applied physics . 2004,第1a3期

机译：紫外扫描光致发光光谱法研究4H-SiC外延晶片的微观缺陷和均匀性
2. Application of UV photoluminescence imaging spectroscopy for stacking faults identification on thick, lightly n-type doped, 4°-off 4H-SiC epilayers [J] . N. Thierry-Jebali, C. Kawahara, T. Miyazawa, AIP Advances . 2015,第3期

机译：紫外光致发光成像光谱技术在厚，轻度n型掺杂，4°-off 4H-SiC外延层上的堆垛层错识别中的应用
3. Identification of Stacking Faults by UV Photoluminescence Imaging Spectroscopy on Thick, Lightly-Doped n-Type 4°-off 4H-SiC Epilayers [J] . Nicolas Thierry-Jebali, Chihiro Kawahara, Tetsuya Miyazawa, Materials science forum . 2015,第期

机译：通过紫外光致发光成像技术在厚的轻掺杂n型4°-off 4H-SiC外延层上识别堆垛层错
4. Investigation of Defects in 4H-SiC by Synchrotron Topography, Raman Spectroscopy Imaging and Photoluminescence Spectroscopy Imaging [C] . E. Pernot, I. El Harrouni, M. Mermoux, 4th European Conference on Silicon Carbide and Related Materials (ECSCRM 2002); Sep 2-5, 2002; Linkoeping, Sweden . 2002

机译：同步辐射形貌，拉曼光谱成像和光致发光光谱成像研究4H-SiC中的缺陷
5. A Characterization of Laponite Nanoclays by Dynamic Light Scattering, Scanning Electron Microscopy, and Cation Exchange Capacity by UV-Visible Spectroscopy [D] . Arnold, Randall. 2017

机译：用UV可见光谱法通过动态光散射，扫描电子显微镜和阳离子交换能力表征Laponite Nanoclays
6. Photoluminescence as a Complementary Tool for UV-VIS Spectroscopy to Highlight the Photodegradation of Drugs: A Case Study on Melatonin [O] . Monica Daescu, N’ghaya Toulbe, Mihaela Baibarac, 2020

机译：光致发光作为紫外欲的光谱学的互补工具突出药物的光降解：褪黑素的案例研究
7. Application of UV photoluminescence imaging spectroscopy for stacking faults identification on thick, lightly n-type doped, 4°-off 4H-SiC epilayers [O] . Thierry-Jebali, N., Kawahara, C., Miyazawa, T., 2015

机译：紫外光致发光成像光谱技术在厚，轻度n型掺杂，4°-off 4H-SiC外延层上的堆垛层错识别中的应用

UV Scanning Photoluminescence Spectroscopy Investigation of 6H- and 4H-SiC

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