Traveling Self-Confined-Solvent Method: Novel LPE Growth of 6H-SiC

机译：行进自约束溶剂法：新型LPE生长6H-SiC

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The first experimental survey of a novel liquid phase epitaxial growth of 6H-SiC(0001) over 2000℃ employing a new sandwich configuration is reported. A 20 μm-thick self-confined-Si-solvent layer is naturally formed between a polycrystalline SiC source platelet and a seed 6H-SiC(0001) substrate by the self-penetration of Si liquid. A single crystalline 6H-SiC of 300 μm thick terminated with atomically flat surface was epitaxially grown on the seed substrate by a 30 min annealing at 2300℃ with no temperature gradient The growth dynamics is governed by the difference in surface energy between the polycrystal and the single crystal.

机译：首次实验研究了采用新的三明治结构在2000℃下新型液相外延生长6H-SiC（0001）的实验。通过Si液体的自渗透，自然地在多晶SiC源血小板和种子6H-SiC（0001）衬底之间自然形成20μm厚的自约束Si溶剂层。在2300℃退火30分钟，在无温度梯度的条件下，在种子衬底上外延生长300μm厚且原子表面平坦的单晶6H-SiC。生长动力学取决于多晶与硅之间的表面能差异。单晶。

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来源
《International Conference on Silicon Carbide and Related Materials 2001 Pt.1 Oct 28-Nov 2, 2001 Tsukuba, Japan》|2001年|p.295-298|共4页
会议地点 Tsukuba(JP);Tsukuba(JP)
作者
Y. Asaoka; M. Hiramoto; N. Sano; T. Kaneko;
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作者单位

Advanced Research Center for Science, Faculty of Science, Kwansei Gakuin University, 2-1 Gakuen, Sanda, Hyogo 669-1337, Japan;

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会议组织
原文格式 PDF
正文语种 eng
中图分类无线电电子学、电信技术;
关键词
6H-SiC; liquid-phase epitaxy; self-confined solvent;

机译：6H-SiC；液相外延；自封闭溶剂;

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Traveling Self-Confined-Solvent Method: Novel LPE Growth of 6H-SiC

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