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首页> 外文会议>International Conference on Silicon Carbide and Related Materials 2003 pt.2(ICSCRM 2003); 20031005-20031010; Lyon; FR >Modification of the Silicon Carbide by proton irradiation
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Modification of the Silicon Carbide by proton irradiation

机译：质子辐照改性碳化硅

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摘要

Hydrogen ions with energy 100 keV and doses ranging from 2·10~(17) to 4·10~(17) cm~(-2) were implanted into the n-type 6H- and 4H-SiC samples at room temperature. The postimplantation sequential annealing of the irradiated samples was performed in the temperature range 500-1500℃. The parameters of the samples were determined by capacitance-voltage and current-voltage measurements, photoluminescence technique, and atomic-force microscopy. It was found that surface blistering appears after postimplantation annealing at 800℃ in the case of hydrogen implantation with doses < 3·10~(17) cm~(-2). Irradiation leads to the formation of a strongly compensated layer at depths close to the projected range of the protons. As a result of annealing at 500℃, the compensated region expands as far as the surface of the sample. A decrease in the resistivity of the compensated layer begin after annealing at ～1200℃ and ends after annealing at 1500℃. After irradiation, the PL intensity decreases dramatically for all the simples. Recovery of the PL intensity starts after annealing at 800℃ and is complete upon annealing at a temperature of 1500℃.
机译：在室温下，将能量为100 keV且剂量范围为2·10〜（17）至4·10〜（17）cm〜（-2）的氢离子注入n型6H-和4H-SiC样品中。在500-1500℃的温度范围内进行被辐照样品的植入后顺序退火。通过电容-电压和电流-电压测量，光致发光技术和原子力显微镜确定样品的参数。研究发现，在氢注入剂量<3·10〜（17）cm〜（-2）的情况下，在800℃进行注入后退火后，表面会出现起泡现象。辐照导致在接近质子投影范围的深度处形成强补偿层。在500℃退火的结果是，补偿区域扩展到了样品的表面。补偿层的电阻率的下降在〜1200℃退火后开始，在1500℃退火后结束。辐照后，所有简单样品的PL强度均急剧下降。 PL强度的恢复在800℃退火后开始，并在1500℃退火后完成。

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