Characterization of a thermal oxidation process on SiC preamorphized by Ar ion implantation

机译：Ar离子注入预非晶化的SiC的热氧化过程的表征

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In this paper we investigate the thermal growth of SiO_2 films on Ar~+ amorphized 6H-SiC. The experimental conditions to grow oxide layers on SiC with high oxidation rate at low temperature have been determined. Rutherford Back Scattering Channeling (RBS-C), Secondary Ion Mass Spectrometry (SIMS) and X-ray photoelectron spectroscopy (XPS) analyses show the presence of a C rich film at the SiC interface. The thickness of this layer increases as the oxidation time increases so that after 390 min a SiO_2C_x transition region as thick as 118 nm has been evidenced between the pure stoichiometric layer of SiO_2 and the SiC substrate.

机译：本文研究了在Ar〜+非晶6H-SiC上SiO_2薄膜的热生长。确定了在低温下以高氧化速率在SiC上生长氧化物层的实验条件。卢瑟福背散射通道（RBS-C），二次离子质谱（SIMS）和X射线光电子能谱（XPS）分析表明，SiC界面处存在富C膜。该层的厚度随着氧化时间的增加而增加，因此在SiO_2的纯化学计量层和SiC衬底之间已经证实了厚达118 nm的SiO_2C_x过渡区。

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《International Conference on Silicon Carbide and Related Materials 2003 pt.2(ICSCRM 2003); 20031005-20031010; Lyon; FR》|2003年|P.1357-1360|共4页
会议地点 Lyon(FR);Lyon(FR)
作者
A. Poggi; R. Nipoti; S. Solmi; M. Bersani; L. Vanzetti;
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CNR-IMM Sezione di Bologna, via Gobetti 101, 40129 Bologna;

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原文格式 PDF
正文语种 eng
中图分类硅Si;
关键词
amorphous SiC; oxidation kinetics; oxide composition; RBS-C; SIMS; XPS;

机译：非晶SiC;氧化动力学;氧化物组成; RBS-C; SIMS; XPS;

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专利

1. Passive-active oxidation boundary for thermal oxidation of 4H-SiC(0001) surface in O_2/Ar gas mixture and its impact on SiO_2/SiC interface quality [J] . Hosoi Takuji, Katsu Yoshihito, Moges Kidist, Applied physics express . 2018,第9期

机译：O_2 / Ar气体混合物中4H-SiC（0001）表面热氧化的被动-主动氧化边界及其对SiO_2 / SiC界面质量的影响
2. Structural and Functional Characterizations of Al+ Implanted 4H-SiC Layers and Al+ Implanted 4H-SiC p-n Junctions after 1950 degrees C Post Implantation Annealing [J] . Nipoti Roberta, Parisini Antonella, Sozzi Giovanna, ECS Journal of Solid State Science and Technology . 2016,第10期

机译：1950℃注入后退火的Al +注入4H-SiC层和Al +注入4H-SiC p-n结的结构和功能表征
3. Interaction of the end of range defect band with the upper buried oxide interface for B and BF_2 implants in Si and silicon on insulator with and without preamorphizing implant [J] . M. Kah, A. J. Smith, J. J. Hamilton, Journal of Vacuum Science & Technology. B, Microelectronics and Nanometer Structures . 2008,第1期

机译：B和BF_2注入在绝缘体上的硅和硅中的B和BF_2注入时，距离缺陷带的末端与上部掩埋氧化物界面之间的相互作用
4. Fabrication of MOS Capacitors by Wet Oxidation of p-type 4H-SiC Preamorphized by Nitrogen Ion Implantation [C] . Yasuto Hijikata, Sadafumi Yoshida, Francesco Moscatelli, European Conference on Silicon Carbide and Related Materials . 2007

机译：通过氮离子注入的P型4H-SiC湿氧化通过湿氧化MOS电容器
5. Electrical passivation of 6H-alpha SiC by thermal oxidation and its characterization and application in SiC MOSFETs. [D] . Kang, Soon Won. 1996

机译：6H-αSiC的热氧化电钝化及其表征和在SiC MOSFET中的应用。
6. Synthesis of Novel Double-Layer Nanostructures of SiC–WOxby a Two Step Thermal Evaporation Process [O] . Hyeyoung Kim, Karuppanan Senthil, Kijung Yong 2009

机译：两步热蒸发法合成新型SiC-WOx双层纳米结构
7. Structural and functional characterizations of Al+ implanted 4H-SiC layers and al+ implanted 4H-SiC p-n junctions after 1950°C post implantation annealing [O] . Nipoti Roberta, Parisini Antonella, Sozzi Giovanna, 2016

机译：1950°C注入后退火后的Al +注入4H-SiC层和Al +注入4H-SiC p-n结的结构和功能表征

Characterization of a thermal oxidation process on SiC preamorphized by Ar ion implantation

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