KINETIC MODEL OF INCORPORATION OF As_4 ON GaAs (001)

机译：GaAs（001）上As_4掺入的动力学模型

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The kinetic model, describing homoepitaxial growth on a (001)GaAs surface within the framework of the kinetic mean field equations, is offered. The following elementary surface processes are included in consideration; As_4 adsorption-desorption, As_4~* bimolecular reaction, incorporation of As_2~(chem) into lattice sites. The model gives the adequate description of the experimental results on growth rate for low and high pressures. Numerical values of elementary constants are obtained.

机译：提供了动力学模型，该模型描述了在动力学平均场方程框架内在（001）GaAs表面上的同质外延生长。考虑以下基本表面处理； As_4吸附-解吸，As_4〜*双分子反应，As_2〜（chem）并入晶格位。该模型充分描述了低压和高压下的生长速率实验结果。获得基本常数的数值。

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《International Conference on Single Crystal Growth and Heat amp; Mass Transfer(ICSC-2003) vol.2; 20030922-26; Obninsk(RU)》|2003年|P.663-667|共5页
会议地点 Obninsk(RU)
作者
Yu.G.Galitsyn; S.P.Moschenko; V.I.Sigimov; V.I.Poshevnev;
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Institute of Semiconductor Physics SB RAN (Novosibirsk, Russia);

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原文格式 PDF
正文语种 eng
中图分类晶体生长工艺;
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2. Structure transition between two GaAs(001)-c(4 × 4) surface reconstructions in As_4 flux [J] . T. Arai, M. Suzuki, Y. Ueno, Journal of Crystal Growth . 2007,第Apr期

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3. Structure transition between two GaAs(001)-c(4 x 4) surface reconstructions in As_4 flux [J] . T. Arai, M. Suzuki, Y. Ueno, Journal of Crystal Growth . 2007,第Apr期

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4. KINETIC MODEL OF INCORPORATION OF As_4 ON GaAs (001) [C] . Yu.G.Galitsyn, S.P.Moschenko, V.I.Sigimov, International Conference on Single Crystal Growth and Heat Mass Transfer . 2003

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KINETIC MODEL OF INCORPORATION OF As_4 ON GaAs (001)

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