KINETIC MODEL OF INCORPORATION OF As_4 ON GaAs (001)

机译：GaAs上AS_4掺入的动力学模型（001）

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The kinetic model, describing homoepitaxial growth on a (001)GaAs surface within the framework of the kinetic mean field equations, is offered. The following elementary surface processes are included in consideration; As_4 adsorption-desorption, As_4~* bimolecular reaction, incorporation of As_2~(chem) into lattice sites. The model gives the adequate description of the experimental results on growth rate for low and high pressures. Numerical values of elementary constants are obtained.

机译：提供了在动力学平均场方程的框架内的（001）GaAs表面上的同性记增长的动力学模型。考虑以下基本表面过程; AS_4吸附 - 解吸，AS_4〜*双分子反应，将AS_2〜（Chem）掺入晶格位置。该模型赋予实验结果对低压和高压的生长速率进行了足够的描述。获得基本常数的数值。

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《International Conference on Single Crystal Growth and Heat Mass Transfer》|2003年||共5页
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Yu.G.Galitsyn; S.P.Moschenko; V.I.Sigimov; V.I.Poshevnev; Ministry of Russian Federation for Atomic Energy; Russian Academy of Sciences(RAS); Scientific Council for Problems in Machine-Building and Technological Processes;
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中图分类晶体生长工艺;
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2. Structure transition between two GaAs(001)-c(4 × 4) surface reconstructions in As_4 flux [J] . T. Arai, M. Suzuki, Y. Ueno, Journal of Crystal Growth . 2007,第Apr期

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4. KINETIC MODEL OF INCORPORATION OF As_4 ON GaAs (001) [C] . Yu.G.Galitsyn, S.P.Moschenko, V.I.Sigimov, International Conference on Single Crystal Growth and Heat amp; Mass Transfer(ICSC-2003) vol.2; 20030922-26; Obninsk(RU) . 2003

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KINETIC MODEL OF INCORPORATION OF As_4 ON GaAs (001)

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