An Application of a Nanoprobe Technique in the Characterization of AdvancedSRAM Devices

机译：纳米探针技术在AdvancedSRAM器件表征中的应用

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The importance of understanding mismatched behavior inrnSRAM devices has increased as the technology node hasrnshrunk below 100nm. Using the nanoprobe technique [1-3],rnthe MOS characteristics of failure bits in actual SRAM cellsrnhave been directly measured. After transistors that are failingrnwere identified, the best approach for identifying nanoscalerndefects was determined. In this study, several types ofrnnanoscale defects, such as offset spacer residue, salicidernmissing from the active area, doping missing from thernchannel, gate oxide defects, contact barrier layer residue, andrnsevered poly-gate silicide were successfully discovered.

机译：随着技术节点缩小到100nm以下，了解inrnSRAM器件的不匹配行为的重要性日益提高。使用纳米探针技术[1-3]，可以直接测量实际SRAM单元中故障位的MOS特性。在确定失效的晶体管之后，确定了识别纳米尺度缺陷的最佳方法。在这项研究中，成功地发现了几种类型的纳米级缺陷，例如偏移间隔物残留物，有源区漏出的硅化物，漏失的掺杂，栅氧化层缺陷，接触势垒层残留物以及被切断的多栅硅化物。

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《ISTFA 2008 : Conference proceedings from the 34th international symposium for testing and failure analysis》|2008年|417-422|共6页
会议地点 Portland OR(US);Portland OR(US)
作者
Hung-Sung Lin; rnChun-Ming Chen;
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United Microelectronics Corporation, Ltd.rnNo. 3, Li-Hsin Rd. II, Hsinchu Science Park, Taiwan 300, R.O.C.rnPhone: 886-3-5782258 ext 33231 Fax:886-3-563-6722 Email:giant_lin@umc.com;

United Microelectronics Corporation, Ltd.rnNo. 3, Li-Hsin Rd. II, Hsinchu Science Park, Taiwan 300, R.O.C.;

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An Application of a Nanoprobe Technique in the Characterization of AdvancedSRAM Devices

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