首页> 外文会议>ISTFA 2008 : Conference proceedings from the 34th international symposium for testing and failure analysis >Characterization and Failure Analysis of Wafer Bonded Devicesand unfilled Through-Silicon-Vias (TSVs)
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Characterization and Failure Analysis of Wafer Bonded Devicesand unfilled Through-Silicon-Vias (TSVs)

机译:晶圆键合器件和未填充的硅通孔(TSV)的表征和故障分析

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摘要

This paper is concerned with characterization and failurernanalysis challenges posed by 3D integration ofrnsemiconductor devices, with a particular focus on waferrnbonded components and Through Silicon Vias (TSV).rnRequirements for sample preparation are discussed,rnalong with advantages and limitations exhibited byrnvarious different techniques. Analysis examples with realrndevices are presented, along with successful samplernpreparation solutions enabled by a precision polishingrntoolset.
机译:本文关注半导体器件的3D集成所带来的表征和故障分析挑战,特别关注晶片键合的组件和硅通孔(TSV)。讨论了样品制备的要求,以及各种不同技术所展现的优势和局限性。介绍了带有实际设备的分析示例,以及由精密抛光工具集支持的成功的样品制备解决方案。

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