首页> 外文会议>ISTFA 2008 : Conference proceedings from the 34th international symposium for testing and failure analysis >Differentiation Between Artifacts and True Defects in 45 nm BEOL Structures inM-TLS Technique
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Differentiation Between Artifacts and True Defects in 45 nm BEOL Structures inM-TLS Technique

机译:TLC技术中45 nm BEOL结构中伪影和真实缺陷的区分

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Modulated Thermal Laser Stimulation (M-TLS) has beenrnestablished as a key technique to accurately localize defects atrnelementary structure level, in deep submicron technologies. Itrnhas been achieved by Thermal Time Constant analysis (TTC)rnwhich allows the study of thermal exchange dynamics. In thisrnpaper, we demonstrate for the first time the efficiency of thisrntechnique on 45 nm Back End Of the Line (BEOL) defectiverntest structure on image mode, and we underline the efficiencyrnof the developed technique to differentiate artifacts from truerndefects in 45 nm BEOL structures.
机译:在深亚微米技术中,调制热激光刺激(M-TLS)已被确立为在局部结构水平上精确定位缺陷的关键技术。它是通过热时间常数分析(TTC)实现的,它可以研究热交换动力学。在本文中,我们首次展示了这种技术在图像模式下对45纳米线后端(BEOL)缺陷测试结构的效率,并强调了已开发技术在45纳米BEOL结构中区分伪影和真实缺陷的效率。

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