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首页> 外文会议>Joint 2015 e-Manufacturing amp; Design Collaboration Symposium 2015 and 2015 International Symposium on Semiconductor Manufacturing >450mm FOUP/LPU system in advanced semiconductor manufacturing processes: A study on the minimization of oxygen content inside FOUP when the door is opened
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450mm FOUP/LPU system in advanced semiconductor manufacturing processes: A study on the minimization of oxygen content inside FOUP when the door is opened

机译：适用于先进半导体制造工艺的450mm FOUP / LPU系统：关于门打开时FOUP内部氧含量最小化的研究

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摘要

In the last 15 years, the FOUP/LPU (front opening unified pod (FOUP) and load-port unit (LPU)) module was adopted by major 300 mm wafer semiconductor fabs and proved to be able to create a very high particle free environment for wafer transfer. However, it is not able to provide a moisture, oxygen or airborne molecular contaminants (AMCs) free environment, as the moisture, oxygen or airborne molecular contaminants exhibit in the FOUP through filter, FOUP material, and/or the last processes (in-process). Currently, the technology roadmap of devices has already moved towards the era of sub-20nm, some even to 10nm, node. For those devices made in such a small scale patterns, they are generally very sensitive to moisture, oxygen and other AMCs in the air. An example is that after the processes of etching, the contaminant, as a form of AMC, may evaporate, deposit, and contaminate wafers in the later processes, such as CMP. The deposited AMC may, again, evaporate and deposit on the wafer of next process. Nitrogen gas purge for stationary door-closed FOUP, which is normally when FOUP is at a purge station or a FOUP stocker, has been adopted to minimize sensitive in-process wafers' exposure to those contaminants in many processes. However, gas purge performed when FOUP door is off i.e. FOUP is in open condition, (thereafter referred as “door off” condition) is still rare. Nevertheless, this approach is very urgent is for sub-20nm process. If oxygen is not of concern, Clean Dry Air (CDA) purge instead of nitrogen is an alternative gas. Note that nitrogen is much more expensive than CDA and with potential safety concern. In-processes, such as etching/Chemical Mechanical Polishing (CMP) require FOUP purge while the FOUP door is open to an Equipment Front End Module (EFEM) load-port. This door off condition comes with exceptional challenges as compared to stationary door-closed conditions. To overcome this critical challenge, a new FOUP/LPU purge system is propo- ed. The system includes two uniform purge diffusers plus top-down pure gas curtain created by a so called “flow field former” when FOUP is in door-off condition. Note that a conceptual patent about “flow field former” in this proposal has been applied (under reviewing). In implementation of this project, firstly, a prototype FOUP/LPU purge system will be built in an ISO class 1 (0.1. um) cleanroom. Various environment parameters in the FOUP including temperature, relative humidity, air velocity magnitude, and concentration of particle will be monitored. Visualization on flow pattern in the FOUP and in the vicinity of door edge will be carried out by green-light laser visualization system. Optimized size/dimensions and operation parameters of the flow filed former will be determined based on the overall testing results. The performance of the newly proposed system will be eventually verified in a production line of a prestigious semiconductor fab. The ultimate objective of this project is to prevent cross contamination and surface oxidation with a quickly control of moisture, oxygen and AMCs when FOUP is in door-off condition through an efficient and purge gas saving system.
机译：在过去的15年中，主要的300毫米晶圆半导体晶圆厂采用了FOUP / LPU（前开口统一吊舱（FOUP）和负载端口单元（LPU））模块，并证明了该模块能够创建非常高的无颗粒环境用于晶圆转移。但是，它不能提供无湿气，氧气或空气传播的分子污染物（AMC）的环境，因为水分，氧气或空气传播的分子污染物会通过过滤器，FOUP材料和/或最后的过程（在-处理）。当前，设备的技术路线图已经迈向20纳米以下的时代，有些甚至达到了10纳米节点。对于以这种小尺寸图案制成的那些设备，它们通常对空气中的水分，氧气和其他AMC非常敏感。一个例子是在蚀刻过程之后，作为AMC形式的污染物可能会在随后的过程（如CMP）中蒸发，沉积和污染晶圆。所沉积的AMC可以再次蒸发并沉积在下一工艺的晶片上。固定门闭式FOUP的氮气吹扫通常在FOUP处于吹扫站或FOUP储料器中时采用，以在许多过程中最大程度地减少敏感的过程中晶圆对那些污染物的暴露。但是，当FOUP门关闭时（即FOUP处于打开状态（以下称为“门关闭”状态））执行的气体清除仍然很少。尽管如此，对于20nm以下制程，这种方法非常紧急。如果不需要考虑氧气，则可以使用清洁干燥空气（CDA）代替氮气。请注意，氮气比CDA贵得多，并且存在潜在的安全隐患。在进行中，例如蚀刻/化学机械抛光（CMP），需要在FOUP门打开至设备前端模块（EFEM）装载端口的同时清除FOUP。与固定的关门状态相比，这种关门状态面临着特殊的挑战。为克服这一关键挑战，提出了一种新的FOUP / LPU吹扫系统。该系统包括两个统一的吹扫扩散器，以及当FOUP处于关门状态时由所谓的“流场形成器”创建的自上而下的纯气幕。注意，该提案中的“流场形成器”概念专利已被申请（正在审查中）。在实施该项目时，首先，将在ISO 1级（0.1 um）洁净室中构建FOUP / LPU净化系统原型。将监视FOUP中的各种环境参数，包括温度，相对湿度，空气速度大小和颗粒浓度。 FOUP中和门边缘附近的流型可视化将通过绿光激光可视化系统进行。将基于整体测试结果确定流场成形器的最佳尺寸/尺寸和操作参数。新提议的系统的性能最终将在著名的半导体晶圆厂的生产线中得到验证。该项目的最终目标是通过高效，净化的气体节省系统，在FOUP处于关门状态时，通过快速控制水分，氧气和AMC来防止交叉污染和表面氧化。

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