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首页> 外文会议>Laser-based micro- and nanoprocessing IX >High performance light trapping structures for Si-based photoelectronics fabricated by hybrid picosecond laser irradiation and chemical corrosion
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High performance light trapping structures for Si-based photoelectronics fabricated by hybrid picosecond laser irradiation and chemical corrosion

机译：混合皮秒激光辐照和化学腐蚀制造的用于硅基光电器件的高性能光捕获结构

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摘要

We propose the fabrication of two types high performance texturized antireflective structures on crystalline (100) silicon (c-Si) surface by hybrid picosecond laser scanning irradiation followed by chemical corrosion. The design and the fabrication with high controllable performance were studied. The hybrid method includes 1064 nm picosecond (ps) laser scanning to form micro-hole array and subsequently short-time alkaline corrosion. After ps laser processing, there is little reconsolidation and heat affect zone on the silicon surface, which is beneficial to achieve the precise chemical corrosion effect. Depending on the laser scanning intervals, scanning times and chemical corrosion time, a variety of surface texture morphologies, even a special micro-nano hierarchical structure in which finer nano-structures formed in the micro units of the texture, were achieved. Observing with SEM, the average diameter of the micro-holes in the micro-nano hierarchica is 25～30 μm, while the average size of the nano-level ladder-like structures on the micro-hole wall is from dozens to hundreds of nanometers. Comparing to the traditional laser texturing techniques for c-Si solar cell, the whole laser processing was carried out in an open air ambient without using etch mask and SF_6/O_2 plasma. The results show the reflectance value of the fabricated c-Si surfaces can reach as low as 6% (400 nm～1000 nm). This is a potential method for economical antireflective structures fabrication which is ideal for using in the high-efficiency silicon-based photoelectronic devices.
机译：我们建议通过混合皮秒激光扫描辐射，然后进行化学腐蚀，在晶体（100）硅（c-Si）表面上制造两种类型的高性能结构化减反射结构。研究了可控性能高的设计与制造。混合方法包括1064 nm皮秒（ps）激光扫描以形成微孔阵列，然后进行短时碱腐蚀。经过ps激光处理后，硅表面几乎没有再固结和热影响区，这有利于实现精确的化学腐蚀效果。取决于激光扫描间隔，扫描时间和化学腐蚀时间，可以获得各种表面纹理形态，甚至是特殊的微纳分层结构，其中在纹理的微单元中形成了更细的纳米结构。扫描电镜观察，微纳米层中微孔的平均直径为25〜30μm，微孔壁上的纳米阶梯状结构的平均尺寸为几十至数百纳米。 。与用于c-Si太阳能电池的传统激光制绒技术相比，整个激光处理是在露天环境中进行的，无需使用蚀刻掩模和SF_6 / O_2等离子体。结果表明，所制备的c-Si表面的反射率值可低至6％（400 nm〜1000 nm）。这是用于经济的抗反射结构制造的潜在方法，对于在基于硅的高效光电器件中使用是理想的。

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