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193-nm lithography: new challenges new worries

机译：193纳米光刻技术：新挑战，新担忧

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Abstract: Photolithography has now moved forward to such an extent that we are considering imaging the 130nm and 100nm technology nodes with optical system, unthinkable a handful of years ago. To do this we have been using the biggest control knob we know, wavelength. The latest wavelength to be introduced into production will be 193nm which will arrive with full field scanners this year. To image using 193nm we have had to radically change the polymer systems we use due to high absorption with conventional chemistries. This has led to materials that will be the most difficult to integrate into manufacturing that we have ever faced. The primary challenge we encounter is the high resist thickness loss in the pattern transfer steps. This is primarily due to low etch resistance of the materials in use but we will also show that photochemical deprotection of the resist during etch has a contribution. One approach to overcome this is to use significantly thicker resist films, this leads to its own problems with pattern collapse a major worry which could easily become a limiting factor in this technique. !8
机译：摘要：光刻技术的发展已达到了某种程度，以至于我们正在考虑使用光学系统成像130nm和100nm技术节点，这在几年前是无法想象的。为此，我们一直使用已知的最大控制旋钮，即波长。即将投入生产的最新波长将是193nm，该波长将在今年与全场扫描仪一起提供。要使用193nm成像，由于传统化学的高吸收性，我们必须彻底改变我们使用的聚合物系统。这导致材料将成为我们所面临的最难集成到制造中的材料。我们遇到的主要挑战是图案转移步骤中的高抗蚀剂厚度损失。这主要是由于所用材料的耐蚀刻性差，但我们还将证明在蚀刻过程中抗蚀剂的光化学脱保护有一定作用。解决该问题的一种方法是使用厚得多的抗蚀剂膜，这导致其自身的图案塌陷问题，这是一个主要问题，很容易成为该技术的限制因素。 ！8

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