首页> 外文会议>Symposium on infrared applications of semiconductors >Monolithic 1.55 mu m surface emitting laser structure with In_(0.53)Ga_(0.33)As/In_(0.52)Al_(0.48)As distributed bragg reflector and single cavity active layer grown by maatalorganic chemical vapor deposition method

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Monolithic 1.55 mu m surface emitting laser structure with In_(0.53)Ga_(0.33)As/In_(0.52)Al_(0.48)As distributed bragg reflector and single cavity active layer grown by maatalorganic chemical vapor deposition method

机译：单片1.55μM表面发射激光结构，具有IN_（0.53）GA_（0.33）AS / IN_（0.52）AL_（0.48）作为分布式布拉格反射器和由Maatalororganic蒸气沉积方法种植的单腔活动层

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Vertical cavity surface emitting laser (VCSEL) structure designed at 1.55 mu m was grown by low pressure metalorganic chemical vapor deposition method. The VCSEL structure contains top and bottom distributed Bragg reflector (DBR) and single cavity active layer. The DBR was grown with In_(0.53)Al_(0.14)Ga_(0.33)As and In_(0.52)Al_(0.48)As quarter lambda wavelength layer, alternatively. The growth temperature was as high as 750 deg C to prevent ordering and phase separation of the In_(0.52)Al_(0.48)As layer. The In_(0.52)Al_(0.48)As buffer layer was subsequently grown on the InP buffer layer in order to make an abrupt uniform interface. Unity reflectance was achieved at the center of 1.55 mu m with 35.5 pairs undoped DBR layers. The reflectance spectrum of undoped DBR showed a wide flat-band region (greater than 50 nm) where the reflectivity was more than 99.5

机译：通过低压金属化学气相沉积法生长设计为1.55μm的垂直腔表面发射激光（VCSEL）结构。 VCSEL结构包含顶部和底部分布式布拉格反射器（DBR）和单腔活动层。作为四分之一Lambda波长层，DBR以IN_（0.53）AL_（0.14）GA_（0.33）为in_（0.52）AL_（0.48）。生长温度高达750℃，以防止in_（0.52）Al_（0.48）作为层的排序和相分离。随后在INP缓冲层上生长为缓冲层的IN_（0.52）AL_（0.48），以制造突然的均匀界面。 Unity反射率在1.55 mu m的中心实现，35.5对未掺杂的DBR层。未掺杂的DBR的反射谱显示出宽带区域（大于50nm），反射率大于99.5

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《Symposium on infrared applications of semiconductors》|1998年||共6页
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J.-H.Baek; B.Lee; l W.S.Han; J.M.Smith; B.S.Jeong; E.-H.Lee; Materials Research Society;
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1. Persistent photoconductivity and electron mobility in In_(0.52)Al_(0.48)As/In_(0.53)Ga_(0.47)As/In_(0.52)Al_(0.48)As/InP quantum-well structures [J] . Kulbachinskii V.A., Lunin R.A., Yuzeeva N.A., Semiconductors . 2013,第7期

机译：In_（0.52）Al_（0.48）As / In_（0.53）Ga_（0.47）As / In_（0.52）Al_（0.48）As / InP量子阱结构中的持久光电导和电子迁移率
2. Electron heating measurements in an In_(0.52)Al_(0.48)As/In_(0.53)Ga_(0.47)As/In_(0.52)Al_(0.48)As heterostructure system [J] . C. Prasad, D. K. Ferry, D. Vasileska, Journal of Vacuum Science & Technology. B, Microelectronics and Nanometer Structure . 2003,第4期

机译：In_（0.52）Al_（0.48）As / In_（0.53）Ga_（0.47）As / In_（0.52）Al_（0.48）As异质结构系统中的电子加热测量
3. Effect of an InP/In_(0.53)Ga_(0.47)As interface on spin-orbit interaction in In_(0.52)Al_(0.48)As/In_(0.53)Ga_(0.47)As heterostructures [J] . Yiping Lin, Takaaki Koga, Junsaku Nitta Physical review. B, Condensed Matter And Materals Physics . 2005,第4期

机译：InP / In_（0.53）Ga_（0.47）As界面对In_（0.52）Al_（0.48）As / In_（0.53）Ga_（0.47）As异质结构中自旋轨道相互作用的影响
4. Monolithic 1.55 mu m surface emitting laser structure with In_(0.53)Ga_(0.33)As/In_(0.52)Al_(0.48)As distributed bragg reflector and single cavity active layer grown by maatalorganic chemical vapor deposition method [C] . J.-H.Baek, B.Lee, l W.S.Han, Symposium on infrared applications of semiconductors . 1998

机译：单片1.55μM表面发射激光结构，具有IN_（0.53）GA_（0.33）AS / IN_（0.52）AL_（0.48）作为分布式布拉格反射器和由Maatalororganic蒸气沉积方法种植的单腔活动层
5. Effect of an InP/In_{0.53}Ga_{0.47}As interface on spin-orbit interaction in In_{0.52}Al_{0.48}As/In_{0.53}Ga_{0.47}As heterostructures [O] . Lin, Yiping, Koga, Takaaki, Nitta, Junsaku 2005

机译：InP / In_ {0.53} Ga_ {0.47} As界面对In_ {0.52} Al_ {0.48} As / In_ {0.53} Ga_ {0.47} As异质结构中自旋轨道相互作用的影响

Monolithic 1.55 mu m surface emitting laser structure with In_(0.53)Ga_(0.33)As/In_(0.52)Al_(0.48)As distributed bragg reflector and single cavity active layer grown by maatalorganic chemical vapor deposition method

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