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首页> 外文会议>IEEE world conference on photovoltaic energy conversion;WCPEC;IEEE photovoltaic specialists conference;PVSC >H_2 DILUTED LOW TEMPERATURE DEPOSITED a-Si:H, INITIAL DEGRADATION AND MODELING
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H_2 DILUTED LOW TEMPERATURE DEPOSITED a-Si:H, INITIAL DEGRADATION AND MODELING

机译：H_2稀释的a-Si：H低温沉积，初始降解和建模

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In a previous study of the hydrogen diluted low temperature deposited (HDLTD) a-Si:H materials no difference was found between the phototransport properties of these materials and those of the standard "undiluted" materials deposited at a substrate temperature of 260°C. However, solar cells made of HDLTD materials exhibited higher open circuit voltage, initially faster light-induced degradation, followed by saturation of this degradation. Here we report a study of the initial degradation of the standard and the HDLTD materials using the steady state photocarrier grating (PCG) technique. The results reveal differences in the degradation of the minority carrier, mobility-lifetime product, (μτ)_h, that are consistent with the degradation of the cells. However, the degradation of the majority carrier product, (μτ)_e, of the two materials is the same. Our model suggests that the probable cause for the higher V_(oc) and saturated degradation in HDLTD material is a lower density of valence band tail states.
机译：在先前的氢稀释低温沉积（HDLTD）a-Si：H材料研究中，这些材料的光传输性能与在260°C的基板温度下沉积的标准“未稀释”材料的光传输性能之间没有发现差异。然而，由HDLTD材料制成的太阳能电池表现出较高的开路电压，最初是较快的光诱导降解，然后是该降解饱和。在这里，我们报告使用稳态光载波光栅（PCG）技术对标准和HDLTD材料的初始退化进行的研究。结果揭示了少数载体的降解差异，即移动性-终生乘积（μt）_h，这与细胞的降解一致。但是，两种材料的多数载流子产物（μτ）_e的降解是相同的。我们的模型表明，HDLTD材料中较高的V_（oc）和饱和降解的可能原因是价带尾态的密度较低。

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