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首页> 外文会议>IEEE world conference on photovoltaic energy conversion;WCPEC;IEEE photovoltaic specialists conference;PVSC >THE ROLES OF ATOMIC HYDROGEN PLAYED IN 'THE CHEMICAL ANNEALING' FOR FABRICATION OF a-Si:H
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THE ROLES OF ATOMIC HYDROGEN PLAYED IN 'THE CHEMICAL ANNEALING' FOR FABRICATION OF a-Si:H

机译：原子氢在“化学退火”中对a-Si：H的制造作用

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摘要

A systematic study has been performed to reveal the role of atomic hydrogens in "Chemical Annealing", where the deposition of thin layer and treatment with atomic hydrogen are repeated alternately for fabrication of stable structure. Relaxation resulting from impingement of atomic hydrogen on the growing surface are distinguished into two pieces, viz., relaxation on the surface and the sub-surface depending on the conditions for deposition of thin layer and the flux of atomic hydrogen. The structural changes within sub-surface resulted in either formation of wider gap films or crystallization at rather low substrate temperature (Ts:100-150 C). At high Ts, on the other hand, the structuralrelaxations are mainly promoted on the growing surface, resulting in formation of the narrower optical gap a-Si:Hand stimulating thegrain growth.
机译：已经进行了系统的研究以揭示原子氢在“化学退火”中的作用，其中交替重复进行薄层沉积和原子氢处理以制造稳定的结构。由原子氢撞击在生长表面上引起的弛豫分为两部分，即，取决于薄层的沉积条件和原子氢通量，在表面和子表面上的弛豫。次表面内的结构变化导致在较低的基板温度（Ts：100-150 C）下形成较宽的间隙膜或结晶。另一方面，在高Ts下，结构松弛主要在生长的表面上促进，导致形成更窄的光学间隙a-Si：促进晶粒生长的手。

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