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首页> 外文会议>IEEE world conference on photovoltaic energy conversion;WCPEC;IEEE photovoltaic specialists conference;PVSC >ZnO/Ag SPUTTERING DEPOSITION ON a-Si SOLAR CELLS
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ZnO/Ag SPUTTERING DEPOSITION ON a-Si SOLAR CELLS

机译：非晶硅太阳能电池上的ZnO / Ag溅射沉积

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摘要

In order to produce large area amorphous silicon solar cell modules and to simplify the module production process, a continuous ZnO/Ag sputtering deposition process has been applied. We found that by means of a continuous ZnO/Ag sputtering deposition method an adhesive a-Si/electrode contact can be realized. We compared short circuit currents of Al ,ZnO/Al and ZnO/Ag back side contact cells and confirmed short circuit current increase by application of ZnO/Ag back side contact. We found that the series resistance is severely depend on the conditions during the first stage of ZnO deposition. We confirmed the reliability of ZnO/Ag structure as the back side contact through high temperature high humidity test. After 310 hours accelerated light induced degradation test which corresponds to one year light exposure our 100cm2 integrated a-Si tandem solar cell kept the efficiency higher than 8.5%.
机译：为了生产大面积的非晶硅太阳能电池组件并简化组件的生产过程，已采用了连续的ZnO / Ag溅射沉积工艺。我们发现，通过连续的ZnO / Ag溅射沉积方法，可以实现a-Si /电极之间的粘接。我们比较了Al，ZnO / Al和ZnO / Ag背面接触单元的短路电流，并确认通过应用ZnO / Ag背面接触单元，短路电流会增加。我们发现串联电阻在很大程度上取决于ZnO沉积第一阶段的条件。通过高温高湿测试，我们确认了ZnO / Ag结构作为背面触点的可靠性。经过310小时的加速光诱导降解测试（相当于一年的光暴露），我们的100cm2集成a-Si串联太阳能电池保持效率高于8.5％。

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