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首页> 外文会议>International VLSI multilevel interconnection conference;VMIC >Comparative Analysis and Study of IMP (Ionized Metal Plasma)-Cu and CVD (Chemical Vapor Deposited)-Cu on Diffusion Barrier Properties of IMP-TaN on SiO_2
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Comparative Analysis and Study of IMP (Ionized Metal Plasma)-Cu and CVD (Chemical Vapor Deposited)-Cu on Diffusion Barrier Properties of IMP-TaN on SiO_2

机译：IMP（电离金属）-Cu和CVD（化学气相沉积）-Cu对SiO_2上IMP-TaN扩散阻挡性能的比较分析和研究

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Comparative study of IMP (Ionized Metal Plasma)-Cu and CVD (Chemical Vapor Deposition)-Cu on diffusion barrier properties of IMP-TaN has been investigated in the Cu (200nm)/TaN (30nm)/SiO_2 (250nm)/Si multi-layer structure. The thermal stability was evaluated by electrical measurements, XRD and RBS. As a main part of the studies, the atomic intermixing, new compound formation, and phase transitions in the test structure were also studied. For the comparison of IMP and CVD deposited Cu and their effect on the IMP-TaN diffusion barrier, AFM, SIMS, XRD and RBS were employed in conjunction with electrical measurements. The IMP-Cu/IMP-TaN7 SiO_2(250nm)/Si structure was found to be stable up to 800°C, which is much higher than 550 °C of CVD-Cu/IMP-TaN/ SiO_2(250nm)/Si structure( Fig.1). IMP-TaN thin film shows a better metallurgical and thermal stability with IMP-Cu than CVD-Cu thin film not due to lower concentration of oxygen and carbon in Cu film, but due to the smaller grain size and lower roughness of IMP-Cu microstructure. Secondary Ion Mass Spectroscopy (SIMS) analysis showed that both IMP and CVD Cu have almost the same concentrations and depth profiles of carbon and oxygen. AFM images (Fig.2) revealed that CVD Cu has a much larger grain size (170nm) and higher surface roughness (RMS -15nm) than IMP Cu with 30nm and 1.4nm, respectively. A comparison of the RBS spectra (Fig.3) of CVD-Cu/IMP-TaN/SiO_2/Si and IMP-Cu/IMP-TaN/SiO_2Si structures annealed to 650 °C for 35 min showed that the CVD Cu spectrum has a peak at the surface scattering energy of Ta, showing Ta accumulation on the surface. Heavy tailing of the Cu peak is also observed. These features are less significant in the IMP spectrum, indicating that intermixing and/or agglomeration of the constituent elements is far more severe in the sample with CVD Cu. It was also found that IMP sputtering of Cu made the individual grains tightly packed and hence increased the packing density. Correspondingly, IMP Cu deposition method enhanced the IMP-TaN diffusion barrier property by suppressing the fast diffusion and intermixing between Cu and TaN film. The failure mechanism of IMP-Cu/IMP-TaN structure was attributed to the formation of compound after 850°C annealing, which leads to loss of conducting Cu layer.
机译：在铜（200nm）/ TaN（30nm）/ SiO_2（250nm）/ Si multi中研究了IMP（电离金属等离子体）-Cu和CVD（化学气相沉积）-Cu对IMP-TaN扩散阻挡性能的比较研究。层结构。通过电气测量，XRD和RBS评估热稳定性。作为研究的主要部分，还研究了原子互混，新化合物的形成以及测试结构中的相变。为了比较IMP和CVD沉积的Cu以及它们对IMP-TaN扩散势垒的影响，结合电学测量采用了AFM，SIMS，XRD和RBS。发现IMP-Cu / IMP-TaN7 SiO_2（250nm）/ Si结构在高达800°C的温度下都是稳定的，这远高于CVD-Cu / IMP-TaN / SiO_2（250nm）/ Si结构的550°C。 （ 图。1）。与CVD-Cu薄膜相比，IMP-TaN薄膜对IMP-Cu的冶金和热稳定性更好，这不是由于Cu薄膜中氧和碳的浓度较低，而是由于较小的晶粒尺寸和较低的IMP-Cu显微组织粗糙度。二次离子质谱（SIMS）分析表明，IMP和CVD Cu的碳和氧浓度和深度分布几乎相同。 AFM图像（图2）显示，CVD Cu的晶粒尺寸（170nm）和表面粗糙度（RMS -15nm）分别比IMP Cu的30nm和1.4nm高得多。将CVD-Cu / IMP-TaN / SiO_2 / Si和IMP-Cu / IMP-TaN / SiO_2Si结构退火至650°C 35 min的RBS光谱（图3）进行比较，结果表明CVD Cu光谱具有在Ta的表面散射能量处出现峰，表明Ta在表面上积累。还观察到了铜峰的严重拖尾。这些特征在IMP光谱中不太重要，表明在具有CVD Cu的样品中，构成元素的混合和/或附聚要严重得多。还发现Cu的IMP溅射使各个晶粒紧密堆积，因此增加了堆积密度。相应地，IMP Cu沉积方法通过抑制Cu和TaN膜之间的快速扩散和混合而增强了IMP-TaN扩散阻挡性能。 IMP-Cu / IMP-TaN结构的失效机理归因于850°C退火后化合物的形成，从而导致导电Cu层的损失。

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