Process Optimization and Film Characterization of Si-Rich Oxide Deposited by PECVD

机译：PECVD沉积富硅氧化物的工艺优化和膜表征

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A detailed study for the superior Si-rich oxide (SRO) deposited by plasma-enhanced chemical vapor deposition (PECVD) was presented to characterize the film properties. To study the characteristics of this film, we measured the retractive index (RI) and wet etch rate of different stoichiometry SRO films deposited by PECVD using silane and nitrous oxide as reacting gases. FTIR and thermal desorption spectroscopy (TDS) were employed to measure film characteristics such as bond density, and hydrogen content. As the RI is increased from 1.52 to above 1.60, the SRO oxide film acts as a better hydrogen barrier against fluorine-doped silicate glass (FSG).

机译：提出了对通过等离子体增强化学气相沉积（PECVD）沉积的高级富Si氧化物（SRO）的详细研究，以表征薄膜的特性。为了研究该膜的特性，我们测量了使用硅烷和一氧化二氮作为反应气体通过PECVD沉积的不同化学计量比SRO膜的回缩指数（RI）和湿蚀刻速率。 FTIR和热脱附光谱法（TDS）用于测量薄膜特性，例如键密度和氢含量。随着RI从1.52增加到1.60以上，SRO氧化物膜可更好地抵抗氟掺杂的硅酸盐玻璃（FSG）的氢阻挡。

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《International VLSI multilevel interconnection conference;VMIC》|2000年|p.404-406|共3页
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Shu-Li Wu; Pei-Ren Jeng;
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中图分类无线电电子学、电信技术;
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Process Optimization and Film Characterization of Si-Rich Oxide Deposited by PECVD

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