Recent Progress of Cu Low-k Interconnects

机译：Cu Low-k互连的最新进展

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Integration of low-k dielectrics and Cu-interconnects is a key factor to improve ULSI devices for 0.1μm-generation. The difficulty is how to reduce the interconnect capacitance with keeping their mechanical strength and the adhesion strength. These characteristics depend not only on the low-k material itself, but also on the deposition process. Namely, the plasma polymerization method is superior to the process compatibility in the multilevel interconnect formation. The highly thermal-stable, p-BCB polymers with k=2.5-2.6 enabled us to make high-speed CMOS logic-LSIs with multi-level low-k/Cu interconnects.

机译：低k电介质和Cu互连的集成是改进适用于0.1μm世代的ULSI器件的关键因素。困难在于如何在保持互连线的机械强度和粘附强度的同时减小其互连电容。这些特性不仅取决于低k材料本身，而且取决于沉积工艺。即，等离子体聚合法优于多层互连形成中的工艺相容性。 k = 2.5-2.6的高度热稳定的p-BCB聚合物使我们能够制造具有多层低k / Cu互连的高速CMOS逻辑LSI。

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《International VLSI multilevel interconnection conference;VMIC》|2000年|p.45-52|共8页
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Yoshihiro Hayashi;
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中图分类无线电电子学、电信技术;
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1. Mesoporous SiO{sub}2 as low-k dielectric for integration in Cu/low-k interconnect systems [J] . Swantje Fruhauf, Stefan E. Schulz, Thomas Gessner Vakuum in Forschung und Praxis . 2006,第2006Suppla期

机译：介孔SiO {sub} 2作为低k电介质，用于集成在Cu /低k互连系统中
2. Low-k organic film in-situ surface-modification etching technology for the Cu/low-k interconnects [J] . H. Ohtake, S. Saito, M. Tada, 電子情報通信学会技術研究報告. シリコン材料·デバイス. Silicon Devices and Materials . 2002,第637期

机译：用于Cu / low-k互连的低k有机膜原位表面改性蚀刻技术
3. Low-k organic film in-situ surface-modification etching technology for the Cu/low-k interconnects [J] . H. Ohtake, S. Saito, M. Tada, 電子情報通信学会技術研究報告. シリコン材料·デバイス. Silicon Devices and Materials . 2002,第637期

机译：用于Cu / Low-K互连的低k有机膜原位表面改性蚀刻技术
4. Inline Low-k damage detection of Cu/Low-k interconnect using micro beam IR method [C] . Goto Kinya, Oka Yoshihiro, Miura Noriko, Interconnect Technology Conference (IITC), 2012 IEEE International . 2012

机译：使用微束红外方法在线检测Cu / Low-k互连的低k损伤
5. Mechanical reliability of porous low-k dielectrics for advanced interconnect: Study of the instability mechanisms in porous low-k dielectrics and their mediation through inert plasma induced re-polymerization of the backbone structure. [D] . Sa, Yoonki. 2015

机译：用于高级互连的多孔低k电介质的机械可靠性：多孔低k电介质的不稳定性机理及其通过惰性等离子体引发的骨架结构再聚合的介导研究。
6. Material design of plasma-enhanced chemical vapour deposition SiCH films for low-k cap layers in the further scaling of ultra-large-scale integrated devices-Cu interconnects [O] . Hideharu Shimizu, Shuji Nagano, Akira Uedono, 2013

机译：用于进一步缩小超大型集成器件-Cu互连的等离子增强化学气相沉积SiCH膜的低k覆盖层的材料设计
7. Enhancement of Raman signals from low-k dielectrics with angle-resolved light scattering on nanostructure patterned Cu/low-k interconnects of IC devices [O] . Maggie Y. M. Huang, Bo Liu, Pik Kee Tan, 2015

机译：利用角度分辨光散射在IC器件上的Cu / Low-K互连上具有角度分辨光散射的低k电介质的拉曼信号的增强

Recent Progress of Cu Low-k Interconnects

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