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首页> 外文会议>European photovoltaic solar energy conference >MONOLITHICALLY INTEGRATED CU(IN,GA)SE2 THIN-FILM SOLAR MODULES ON FLEXIBLE POLYMER AND METAL FOILS
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MONOLITHICALLY INTEGRATED CU(IN,GA)SE2 THIN-FILM SOLAR MODULES ON FLEXIBLE POLYMER AND METAL FOILS

机译：在柔性聚合物和金属箔上的单片集成Cu（In，Ga）SE2薄膜太阳能模块

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A significant feature of Cu(In,Ga)Se2 (CIS)-based thin-film devices is the monolithic solar cell integration which provides power at a comparably high and adjustable voltage and a low current. No metallic grids are required on top and consequently the modules appear very homogeneous and aesthetic. The patterning techniques which have been developed and optimised on glass substrates, however, cannot be transferred directly to sensitive and flexible foils. We manufactured flexible and monolithically integrated CIS modules both on polyimide (PI) films at low deposition temperatures (Tmax ≤ 450°C) and on electrically insulated metal foils at high deposition temperatures (T ≈ 550°C). The absorber was coevaporated in-line on substrates of up to 20 cm × 30 cm. All three patterning steps could be performed by non-contact methods using either a Nd-YAG laser (1064nm) for direct laser scribing or a low-intensity diode laser (409nm) as the illuminant for photolithographic patterning. Additionally, mechanical patterning of the absorber was possible on smooth substrates and when the CIGS adhesion was relatively low. AM1.5 conversion efficiencies of 6.8 % (10 cells) and 3.8 % (39 cells) were obtained on metal substrates of 10 × 10cm2 and 20 × 30cm2 without any external Na supply.
机译：基于Cu（In，Ga）Se2（CIS）的薄膜装置的重要特征是单片太阳能电池集成，其在相对高和可调节的电压和低电流下提供功率。顶部不需要金属网格，因此模块出现非常均匀和美学。然而，在玻璃基板上开发和优化的图案化技术不能直接转移到敏感和柔性箔上。在低沉积温度（Tmax≤450℃）和高沉积温度下的电绝缘金属箔上，我们在聚酰亚胺（PI）膜上制造了柔性且单片集成的顺式模块，在高沉积温度下（T≈550℃）。将吸收剂在最多20cm×30cm的基材上在线串联。所有三个图案化步骤可以通过非接触方法使用Nd-YAG激光器（1064nm）来执行用于直接激光划线或低强度二极管激光器（409nm）作为光刻图案化的光源。另外，吸收器的机械图案化在光滑的基材上是可能的，并且当CIGS粘附相对较低时。在10×10cm2和20×30cm2的金属基板上获得6.8％（10个细胞）和3.8％（39个细胞）的转化效率，没有任何外部Na供应。

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