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首页> 外文会议>European photovoltaic solar energy conference >THE POTENTIAL OF HOT-WIRE DEPOSITED MICROCRYSTALLINE SILICON FOR THIN FILM SILICONSINGLE- AND MULTIJUNCTION SOLAR CELLS
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THE POTENTIAL OF HOT-WIRE DEPOSITED MICROCRYSTALLINE SILICON FOR THIN FILM SILICONSINGLE- AND MULTIJUNCTION SOLAR CELLS

机译：薄膜硅单晶和多结太阳能电池热线沉积微晶硅的潜力

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In this paper, the potential of hot-wire chemical vapour-deposited μc-Si grown slightly away from the amorphous to microcrystalline transition, is explored in thin film nip-configured solar cells. A series of single junction cellswith μc-Si I-layer thicknesses ranging from 0.5 to 3.0 μm was investigated. These cells were deposited onto stainless steeland did not comprise light-trapping elements. Voc was found to go down with increasing μc-Si thickness and has a highestvalue of 0.54 V for the thinnest sample. FF shows a maximum of 0.72 for the cell with the 1.0 μm I-layer. Jsc and efficiency increase to nearly saturated values of 16.4 mA/cm2 and 5.2 %, respectively. Annealing improves the cell performance, mainly by increasing FF. For proto-Si/μc-Si and μc-Si/μc-Si tandem cells good Voc-values of 1.38 and 1.04 V, and very high FF-values of 0.75 and 0.77 were obtained. A proto-Si/μc-Si/μc-Si triple junction cell had a Voc of 1.77 V and a FF of 0.69, which is lower than expected in view of the μc-Si/μc-Si tandem cell. This was found to be partly due to the top cell absorption. The good Voc- and FF-values for the single and multijunction cells and, in particular, the high FF-values of the tandem cells show the high optoelectronic quality and potential of our hot-wire μc-Si material.
机译：在本文中，在薄膜压区配置的太阳能电池中，探索了热线化学气相沉积的μc-Si从无定形向微晶转变略微增长的潜力。一系列单结电池 研究了μc-SiI层的厚度范围为0.5到3.0μm。这些电池被沉积在不锈钢上 并且不包含陷光元件。发现Voc随着μc-Si厚度的增加而下降，并且具有最高的 对于最薄的样品，其值为0.54V。 FF显示I层厚度为1.0μm的电池的最大值为0.72。 Jsc和效率分别增加到接近饱和的16.4 mA / cm2和5.2％的值。退火主要通过增加FF来改善电池性能。对于原硅/μc-Si和μc-Si/μc-Si串联电池，可获得良好的Voc值1.38和1.04 V，以及非常高的FF值0.75和0.77。原始Si /μc-Si/μc-Si三结电池的Voc为1.77 V，FF为0.69，这比考虑到μc-Si/μc-Si串联电池的期望值要低。发现这部分归因于顶部细胞吸收。单结和多结电池的良好Voc和FF值，尤其是串联电池的FF值高，表明我们的热线μc-Si材料具有很高的光电质量和潜力。

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