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DIFFUSION LENGTHS OF SILICON SOLAR CELLS FROM LUMINESCENCE IMAGES

机译:发光图像在硅太阳能电池中的扩散长度

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A method for spatially resolved measurement of the minority carrier diffusion length in siliconwafers and in silicon solar cells is introduced that is based on measuring the ratio of two luminescence imagestaken with two different spectral filters. Good agreement is observed with the diffusion length distributionobtained from a spectrally resolved light beam induced current (LBIC) map. In contrast to the determination ofdiffusion lengths from one single luminescence image, the method proposed here gives absolute values of thediffusion length without the need for a separate calibration. It is also much less sensitive to lateral voltagevariations across the cell area as caused by local variations of the series resistance. It is shown that measuringthe ratio of two luminescence images allows distinguishing shunts or surface defects from bulk defects. Themethod is applicable in principle to both, photoluminescence and electroluminescence measurements. In thiswork it is demonstrated experimentally by electroluminescence measurements on a multicrystalline silicon solarcell.
机译:硅中少数载流子扩散长度的空间分辨测量方法 晶片和硅太阳能电池中的介绍是基于测量两个发光图像的比率 用两个不同的光谱滤光片拍摄。观察到与扩散长度分布的一致性 从光谱分辨光束感应电流(LBIC)图获得。与确定 单个发光图像的漫射长度,此处提出的方法给出了 扩散长度,无需单独校准。它对横向电压也不太敏感 由串联电阻的局部变化引起的整个单元区域的变化。显示测量 两个发光图像的比率可以将分流或表面缺陷与整体缺陷区分开。这 该方法原则上适用于光致发光和电致发光测量。在这个 通过在多晶硅太阳能电池上进行电致发光测量,实验证明了这一工作 细胞。

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