A NOVEL LINEAR RF SOURCE FOR PECVD OF THIN-FILM SILICON

机译：薄膜硅PECVD的新型线性RF源

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We present a new linear RF source for plasma enhanced CVD of amorphous and microcrystallinesilicon. The source has been developed for application in continuous, roll-to-roll deposition of doped silicon layers, aspart of a system in which the intrinsic silicon layers will be made by high-rate microwave PECVD. Plasma analysis,by Langmuir probing and by Retarding Field Analysis, shows that the plasma is homogeneous within ± 3% over theentire width of the source, and that the energies of ions arriving at the substrate are lower than 10 eV. The width ofthe deposition regime in this case is 30 cm, but the sources can be extended to achieve homogeneous deposition overwidths of more than 1 m. The source is well suited for deposition of amorphous and microcrystalline silicon, and thetransition from microcrystalline growth to amorphous growth occurs for SiH_4/H_2 flow ratios between 0.05 and 0.01.

机译：我们提出了一种新的线性射频源，用于非晶和微晶的等离子体增强CVD 硅。该源已被开发用于连续，卷对卷的掺杂硅层沉积，例如：系统的一部分，其中本征硅层将通过高速微波PECVD制成。血浆分析 Langmuir探测和缓速场分析的结果表明，等离子体的均匀度在±3％范围内。源的整个宽度，以及到达基板的离子的能量低于10 eV。宽度在这种情况下，沉积方式为30厘米，但是可以扩展源，以在宽度超过1 m。该源非常适合于沉积非晶硅和微晶硅，并且 SiH_4 / H_2流量比介于0.05和0.01之间时，会发生从微晶生长到非晶生长的转变。

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《European photovoltaic solar energy conference》|2007年|p.1847-1850|共4页
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W.J. Soppe; B.B. Van Aken; C. Devilee; H. Schlemm;
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中图分类太阳能技术;太阳能电池;
关键词
RF PECVD; a-Si:H; μc-Si:H; plasma; roll-to-roll;

机译：RF PECVD; a-Si：H;μc-Si：H;等离子体;卷对卷;

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专利

1. Inline deposited thin-film silicon solar cells on imprinted foil using linear PECVD sources [J] . Van Aken B.B., L?ffler J., Heijna M.C.R., Journal of Non-Crystalline Solids: A Journal Devoted to Oxide, Halide, Chalcogenide and Metallic Glasses, Amorphous Semiconductors, Non-Crystalline Films, Glass-Ceramics and Glassy Composites . 2012,第17期

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2. Deposition of intrinsic hydrogenated amorphous silicon for thin-film solar cells - a comparative study for layers grown statically by RF-PECVD and dynamically by VHF-PECVD [J] . T. Zimmermann, A. J. Flikweert, T. Merdzhanova Progress in photovoltaics . 2014,第2期

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3. Self-aligned gate and source drain contacts in inverted-staggered a-Si:H thin-film transistors fabricated using selective area silicon PECVD [J] . Yang C.S., Read W.W. IEEE Electron Device Letters . 1998,第6期

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4. Dynamically deposited thin-film silicon solar cells on imprinted foil using linear PECVD sources [C] . Loffler J. Photovoltaic Specialists Conference (PVSC), 2011 37th IEEE . 2011

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5. Development and optimization of high-efficiency thin-film silicon based solar cells using VHF PECVD techniques. [D] . Cao, Xinmin. 2008

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6. Silicon Nitride Deposition for Flexible Organic Electronic Devices by VHF (162 MHz)-PECVD Using a Multi-Tile Push-Pull Plasma Source [O] . Ki Seok Kim, Ki Hyun Kim, You Jin Ji, -1

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7. Amorphous-silicon thin-film transistors deposited by VHF-PECVD and hot-wire CVD [O] . B. Stannowski A, R. B. Wehrspohn B, M. J. Powell C 2015

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8. Effective passivation of the low resistivity silicon surface by a rapid thermal oxide/PECVD silicon nitride stack and its application to passivated rear and bifacial Si solar cells [R] . Rohatgi, A. , Narasimha, S. , Ruby, D. S. 1998

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A NOVEL LINEAR RF SOURCE FOR PECVD OF THIN-FILM SILICON

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