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首页> 外文会议>European photovoltaic solar energy conference >METALLIC PRECURSORS EVAPORATION AND SUBSEQUENT SELENIZATION FOR CuInSe_2 THIN FILMS FORMATION
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METALLIC PRECURSORS EVAPORATION AND SUBSEQUENT SELENIZATION FOR CuInSe_2 THIN FILMS FORMATION

机译：CuInSe_2薄膜形成的金属前驱物蒸发和随后的选择

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摘要

Polycrystalline CuInSe_2 thin films were obtained by the selenization in a cuasi closed graphite box ofCu and In layers with different metallic precursor sequences. A tendency in the deposition geometry of thesequentially evaporated Cu and In layers was found for our system. From the metallic samples, we achieved CuInSe_2films with chalcopyrite structure, preferential orientation in the (112) plane, good crystallinty and E_g=0.93-0.96 eV.Cu-selenides secondary phases were detected on the surface and removed with a KCN etching. Also, the CIS filmswith In/Cu sequence presented In_2O_3 phase. A dependence of the metallic precursor configuration with the CIS filmproperties was observed. ～1 μm thickness CIS films with In/Cu/In configuration showed a lower average roughness,good adherence and better optical and structural properties. ～2 μm thickness CIS films with In/Cu/In/Cu/Inconfiguration showed very similar characteristics to In/Cu/In CIS films but a worse adherence to the substrate and asignificant roughness.
机译：通过在密闭的石墨石墨箱中硒化得到多晶CuInSe_2薄膜。 具有不同金属前体序列的Cu和In层。沉积物几何形状的趋势 在我们的系统中发现了依次蒸发的Cu和In层。从金属样品中，我们获得了CuInSe_2 具有黄铜矿结构，在（112）平面中优先取向，良好的结晶度和E_g = 0.93-0.96 eV的薄膜。 在表面上检测到硒化铜次级相，并用KCN蚀刻将其去除。还有，独联体电影 In / Cu序列呈现In_2O_3相。 CIS膜对金属前驱体结构的依赖性 观察到性能。 In / Cu / In构型的〜1μm厚度的CIS膜具有较低的平均粗糙度， 良好的附着力以及更好的光学和结构性能。具有In / Cu / In / Cu / In的〜2μm厚度的CIS膜 构型显示出与In / Cu / In CIS膜非常相似的特性，但对基材的粘附性更差， 明显的粗糙度。

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