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首页> 外文会议>European photovoltaic solar energy conference >HIGHLY MISMATCHED SEMICONDUCTOR ALLOYS FOR HIGH-EFFICIENCY SOLAR CELLS
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HIGHLY MISMATCHED SEMICONDUCTOR ALLOYS FOR HIGH-EFFICIENCY SOLAR CELLS

机译：高效太阳能电池的高度匹配的半导体合金

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Highly mismatch alloys (HMAs) are dilute alloys whose fundamental properties are dramatically modifiedthrough the substitution a small fraction of isovalent elements on the anion sublattice with distinctly differentelectronegativities. In HMAs the hybridization of the extended states of the majority component with the localized statesof the minority component results in band restructuring which is described by the band anticrossing (BAC) model. Weexploit various II-VI and III-V HMAs for high efficiency photovoltaics including the novel intermediate band solar cells(IBSCs) concept and multi-junction devices. Guided by the BAC model we have designed and synthesized two HMAs:ZnO_xTe_(1-x) (with x～1-3%) and GaN_xAs_(1-x-y)P_y (with y=0.3-0.5 and x～0.5%) which have narrow O and N relatedintermediate bands, respectively within the energy gap. These materials are of particular interest to the development ofIBSCs that have a calculated thermodynamic efficiency limit exceeding 60%. Moreover, HMAs offer the interestingpossibility to be integrated into in a double junction tandem cell with a Si base. Calculations predict a large improvementof the thermodynamic efficiency limit from 40% for Si to 53% for the tandem with the top cell band gap of ～1.8 eV. Wehave used the BAC model to show that two HMAs: GaN_xBi_yP_(1-x-y) (with x=0.0225, y=0.0017) and GaN_xSb_yP_(1-x-y) (withx=0.029, y=0.013) are lattice matched to Si and have band gaps of 1.8 eV.
机译：高度失配合金（HMA）是稀释合金，其基本性能得到了显着改善 通过置换，阴离子亚晶格上的一小部分等价元素具有明显不同 电负性。在HMA中，多数成分的扩展状态与局部状态的杂交 少数成分的分离会导致谱带重组，这由谱带反交叉（BAC）模型描述。我们 利用各种II-VI和III-V HMA来制造包括新型中带太阳能电池在内的高效光伏电池 （IBSC）概念和多结器件。在BAC模型的指导下，我们设计并合成了两个HMA： ZnO_xTe_（1-x）（x〜1-3％）和GaN_xAs_（1-x-y）P_y（y = 0.3-0.5 and x〜0.5％）与O和N窄相关 中间带，分别在能隙内。这些材料对于开发新材料尤为重要。 计算出的热力学效率极限超过60％的IBSC。此外，HMA提供了有趣的 有可能集成到具有Si基的双结串联电池中。计算预测会有很大的改善 热力学效率极限从Si的40％到串联的53％，最高单元带隙为〜1.8 eV。我们 使用BAC模型显示了两个HMA：GaN_xBi_yP_（1-x-y）（x = 0.0225，y = 0.0017）和GaN_xSb_yP_（1-x-y）（x = 0.0225，y = 0.0017） x = 0.029，y = 0.013）与Si晶格匹配，带隙为1.8 eV。

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