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High power, fully integrated SMT amplifiers with +47dBm OIP3 at 15GHz and 6W, 38 efficiency at 30GHz using low cost, high volume PHEMT

机译：大功率，完全集成的SMT放大器，在15GHz和6W功率下具有+ 47dBm OIP3，在30GHz时使用低成本，大体积PHEMT的效率为38％

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The system power amplifier''s linearity sets the maximum bit rate and the efficiency determines the maximum output power possible given a fixed heat dissipation or DC supply. This paper demonstrates that using a GaAs PHEMT 0.15µm gate process, industry leading performance can be attained. Shown is a 15GHz linear power amplifier capable of − 52dBc IM3 at 21dBm output power (+47dBm OIP3). Also demonstrated is a 30GHz saturated power amplifier capable of making 38dBm (6W) output power at 38% peak power added efficiency. Both are fully matched to 50 Ω and have over 20dB of gain. Both are housed in a low cost laminate surface mount package.

机译：系统功率放大器的线性度设置最大比特率，而效率确定在给定固定散热或直流电源的情况下可能的最大输出功率。本文证明，使用GaAs PHEMT 0.15µm栅极工艺可以达到行业领先的性能。显示的是一个15GHz线性功率放大器，在输出功率为21dBm（+ 47dBm OIP3）时能够达到-52dBc IM3。还展示了一个30GHz饱和功率放大器，该放大器能够以38％的峰值功率附加效率产生38dBm（6W）的输出功率。两者均完全匹配至50Ω，并具有超过20dB的增益。两者都装在低成本的层压表面安装封装中。

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《40th European Microwave Conference》|2010年|1654-1657|共4页
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作者
Morkner Henrik; Fujii Kohei; Ostermann Brent;
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原文格式 PDF
正文语种
中图分类微波与超高频技术;
关键词
FET Amplifiers; HEMT; Power amplifiers;

机译：FET放大器; HEMT;功率放大器;

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专利

1. A SINGLE POWER SUPPLY 0.1-3.5 GHZ LOW NOISE AMPLIFIER DESIGN USING A LOW COST 0.5 μM D-MODE PHEMT PROCESS [J] . Denis Sotskov, Vadim Elesin, Alexander Kuznetsov, Facta Universitatis. Series Electronics and Energetics . 2020,第2期

机译：采用低成本0.5μMD模式PHEMT工艺的单电源0.1-3.5 GHZ低噪声放大器设计
2. Efficiency enhancement by employing the transistor nonlinear capacitors effects in a 6W hybrid X-band Class-J power amplifier [J] . Mehdi Forouzanfar, Mojtaba Joodaki International journal of RF and microwave computer-aided engineering . 2018,第2期

机译：通过在6W混合X波段J类功率放大器中采用晶体管非线性电容器效应来提高效率
3. A 38-dBm POWER AMPLIFIER USING AlGaAs/InGaAs/GaAs PHEMT FOR S-BAND APPLICATIONS [J] . Hong-Zhi Liu, Hou-Kuei Huang, Ray-Jay Chiu, Microwave and optical technology letters . 2005,第4期

机译：使用AlGaAs / InGaAs / GaAs PHEMT的38 dBm功率放大器，用于S波段应用
4. High power, fully integrated SMT amplifiers with +47dBm OIP3 at 15GHz and 6W, 38 efficiency at 30GHz using low cost, high volume PHEMT [C] . Morkner Henrik, Fujii Kohei, Ostermann Brent 40th European Microwave Conference . 2010

机译：大功率，完全集成的SMT放大器，在15GHz和6W功率下具有+ 47dBm OIP3，在30GHz时使用低成本，大体积PHEMT的效率为38％
5. A 40 GHz Power Amplifier Using a Low Cost High Volume 0.15 um Optical Lithography pHEMT Process. [D] . Mays, Kenneth W. 2012

机译：采用低成本大体积0.15 um光学光刻pHEMT工艺的40 GHz功率放大器。
6. Self-powered integrated microfluidic point-of-care low-cost enabling (SIMPLE) chip [O] . Erh-Chia Yeh, Chi-Cheng Fu, Lucy Hu, 2017

机译：自供电的集成微流即时护理低成本启用（SIMPLE）芯片
7. A Low Cost SMT Integrated Frequency Doubler and Power Amplifier for 30GHz DBS Uplink Applications [O] . Monica Bhatnagar, Henrik Morkner 2013

机译：用于30GHz DBs上行链路应用的低成本smT集成倍频器和功率放大器
8. High-Efficiency, Low-Voltage, Compound Semiconductor Devices for Microwave and MM-211 Wave Power Amplifiers [R] . Chao, P. C., Hietala, V. M., Kong, W., 1999

机译：用于微波和mm-211波功率放大器的高效率，低电压，复合半导体器件

High power, fully integrated SMT amplifiers with +47dBm OIP3 at 15GHz and 6W, 38 efficiency at 30GHz using low cost, high volume PHEMT

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