A 38-dBm POWER AMPLIFIER USING AlGaAs/InGaAs/GaAs PHEMT FOR S-BAND APPLICATIONS

Hong-Zhi Liu; Hou-Kuei Huang; Ray-Jay Chiu; Chen-Kuo Chu; Che-Hung Lin; Chih-Cheng Wang; Yeong-Her Wang; Ching-Hsueh Chang; Chang-Luen Wu; Chian-Sern Chang

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A 38-dBm POWER AMPLIFIER USING AlGaAs/InGaAs/GaAs PHEMT FOR S-BAND APPLICATIONS

机译：使用AlGaAs / InGaAs / GaAs PHEMT的38 dBm功率放大器，用于S波段应用

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A high-performance S-band power amplifier fabricated on a low-cost 20-mil-thick FR-4 printed circuit board (PCB) for S-band radar applications is demonstrated. The amplifier consists of a single-ended driver stage and a balanced output power stage utilizing Wilkinson power dividers/combiners with quarter-wave transmission lines. Under 10-V and 2.45-A dc bias condition, the S-band power amplifier with 23-dB small-signal gain, 38-dBm 1-dB gain-compression power with 25,6% power-added efficiency (PAE) and 3.9-dB noise figure can be achieved.. In addition, excellent linearity with a 48.73-dBm 3rd-order intercept point is also measured.

机译：展示了一种在S波段雷达应用的低成本20密耳厚FR-4印刷电路板（PCB）上制造的高性能S波段功率放大器。该放大器由一个单端驱动器级和一个平衡输出功率级组成，该级利用Wilkinson功率分配器/组合器与四分之一波长传输线组成。在10V和2.45A直流偏置条件下，S波段功率放大器具有23dB的小信号增益，38dBm的1dB增益压缩功率以及25.6％的功率附加效率（PAE）和可以实现3.9 dB的噪声系数。此外，还测量了48.73 dBm三阶截点的出色线性度。

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来源
《Microwave and optical technology letters》 |2005年第4期|共3页
作者
Hong-Zhi Liu; Hou-Kuei Huang; Ray-Jay Chiu; Chen-Kuo Chu; Che-Hung Lin; Chih-Cheng Wang; Yeong-Her Wang; Ching-Hsueh Chang; Chang-Luen Wu; Chian-Sern Chang;
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原文格式 PDF
正文语种 eng
中图分类光学;
关键词
S-band; Power amplifier; PHEMT; Linearity;

机译：S波段功率放大器PHEMT线性;

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专利

1. A 38-dBm POWER AMPLIFIER USING AlGaAs/InGaAs/GaAs PHEMT FOR S-BAND APPLICATIONS [J] . Hong-Zhi Liu, Hou-Kuei Huang, Ray-Jay Chiu, Microwave and optical technology letters . 2005,第4期

机译：使用AlGaAs / InGaAs / GaAs PHEMT的38 dBm功率放大器，用于S波段应用
2. A Symmetrical Model for Microwave Power AlGaAs/InGaAs pHEMTs for Switch Circuit Applications [J] . Lin D.-M., Huang C.-C., Chan Y.-J. Electron Devices, IEEE Transactions on . 2009,第11期

机译：用于开关电路应用的微波功率AlGaAs / InGaAs pHEMT的对称模型
3. Dual-gate E/E and E/D-mode AlGaAs/InGaAs pHEMT for microwave power applications [J] . D. M. Lin, C. K. Lin, J. S. Wu, 電子情報通信学会技術研究報告. シリコン材料·デバイス. Silicon Devices and Materials . 2006,第138期

机译：适用于微波功率应用的双栅极E / E和E / D模式AlGaAs / InGaAs pHEMT
4. An optimized 0.1 um T-gate AlGaAs/InGaAs/GaAs PHEMT power amplifier MMIC for Ka-band applications [C] . Cho, Sung-Jin, Wang, Cong, Maharjan, Ram Krishna, Asia-Pacific Microwave Conference;APMC 2012 . 2012

机译：针对Ka频段应用的优化的0.1 um T栅极AlGaAs / InGaAs / GaAs PHEMT功率放大器MMIC
5. Material, physics, device physics, and technology of high-power pseudomorphic AlGaAs/InGaAs high electron mobility transistors. [D] . Chou, Yeong-Chang. 1997

机译：高功率拟晶AlGaAs / InGaAs高电子迁移率晶体管的材料，物理学，器件物理学和技术。
6. Reduced Subthreshold Characteristics and Flicker Noise of an AlGaAs/InGaAs PHEMT Using Liquid Phase Deposited TiO2 as a Gate Dielectric [O] . Kai-Yuen Lam, Jung-Sheng Huang, Yong-Jie Zou, 2016

机译：使用液相沉积的TiO2作为栅介质的AlGaAs / InGaAs PHEMT的亚阈值特性和闪烁噪声降低
7. Mechanism of AlGaAs/InGaAs pHEMT Nonlinear Response Under High-Power Microwave Radiation [O] . Yu-Qian Liu, Chang-Chun Chai, Han Wu, 2020

机译：高功率微波辐射下Algaas / IngaAs PhEMT非线性反应机制

A 38-dBm POWER AMPLIFIER USING AlGaAs/InGaAs/GaAs PHEMT FOR S-BAND APPLICATIONS

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