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Progress on III-nitride/silicon hybrid multijunction solar cells

机译:III族氮化物/硅杂化多结太阳能电池的研究进展

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We report on the progress towards a high efficiency InGaN/Si tandem hybrid solar cell. The proof of principle has been demonstrated in a 5 × 5 mm III-nitride/Si dual junction solar cell, with p GaN junction grown by molecular beam epitaxy (MBE) functioning as the top cell and a standard n-type Si wafer with an Al doped p-type surface functioning as the bottom cell. An open circuit voltage (Voc) of 2.5 V was measured under 1× AM1.5G illumination conditions with additional UV laser illumination of the GaN junction. The quantum efficiency spectra show that both junctions are active and working in series. The 1x sun conversion efficiency of the GaN/Si tandem cell is limited to less than 1% due to the large band gap of GaN not being matched to the solar spectrum. Ongoing work is therefore focused on lowering the bandgap of the top cell to an optimum of about 1.8 eV by increasing the indium content of the top InGaN cell in order to match the current of the Si bottom cell under solar illumination. Very recently, we have achieved PV action in the first InGaN/Si hybrid cells. The remaining challenge lies in maintaining a high quality pn- junction in InGaN as the In fraction has to be increased towards 45%.
机译:我们报告了高效InGaN / Si串联混合太阳能电池的进展。原理证明已在5×5 mm III-氮化物/ Si双结太阳能电池中得到证明,其中通过分子束外延(MBE)生长的p / n GaN结用作顶部电池和标准n型Si晶片Al掺杂的p型表面起着底部电池的作用。在1x AM1.5G照明条件下,加上GaN结的额外UV激光照射,测得的开路电压(Voc)为2.5V。量子效率谱表明,两个结均处于活动状态并串联工作。 GaN / Si串联电池的1倍太阳转换效率限制为小于1%,这是因为GaN的大带隙未与太阳光谱匹配。因此,正在进行的工作集中在通过增加顶部InGaN单元的铟含量以将顶部单元的带隙降低到大约1.8 eV的最佳值,以匹配硅底部单元在太阳光照下的电流。最近,我们在首批InGaN / Si混合电池中实现了光伏作用。剩下的挑战在于在InGaN中保持高质量的pn结,因为In的比例必须增加到45%。

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