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23 efficient industrial bifacial n-type crystalline silicon solar cells with electron-selective poly-silicon passivated contacts

机译:23%高效的工业双层N型晶体硅太阳能电池,具有电子选择聚硅钝化触点

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This work investigated the advantages of transporting charge carriers through tunnel oxide passivation contacts and realized n-type passivated contacts cell in mass production line. When the thermal silicon oxide (SiO_x) tunnel layer is controlled at 1.2 nm, we presented a ~80 nm poly-silicon layer and achieved excellent passivation. The n-type doping of the poly-Si layer was achieved by POCl_3 diffusion in a tube furnace, that resulted in a sheet resistance (R_(sheet)) of ~70Ω/sq, as measured on saw damage etched p-type monitor wafers. Excellent Jo value is down to 5.0 fA/cm~2, which is measured for n~+-poly-Si contacts. The front emitter is formed by BBr_3 diffusion in a tube furnace at 990°C, and then driven to oxidation, resulting in a sheet resistance of R_(sheet,p+) ~100 Ω/sq. The Al_xO_3 and SiNx layers were deposited on the front side for emitter passivation, the Al_xO_3 layer is about 6nm thick, performed by atomic layer deposition system. Both side silicon nitride (SiN_x) antireflection coating was optimized to match the corresponding passivation and optical requirement. Finally, all of the cells were fabricated by conventional screen printing and optimized firing. The average cell efficiency achieved 22.83%, and the highest efficiency was up to 23.15%.
机译:这项工作研究了通过隧道氧化物钝化触点运输电荷载体的优点,并实现了大规模生产线中的n型钝化触点细胞。当热氧化硅(SiO_x)隧道层控制在1.2nm处时,我们呈现了一个〜80nm的多晶硅层并实现了优异的钝化。通过管炉中的POCl_3扩散实现多Si层的n型掺杂,其导致〜70Ω/ sq的薄片电阻(R_(片)),如锯损伤蚀刻的p型监视器晶片上所测量的。优异的JO值下降到5.0 fa / cm〜2,测量为n〜+ -poly-si触点。前发射器通过在990℃下的管炉中的BBR_3扩散形成,然后驱动到氧化,导致R_(片材,P +)〜100Ω/ Sq的薄层电阻。 Al_XO_3和SINX层沉积在前侧,用于发射极钝化,通过原子层沉积系统进行AL_XO_3层约为6nm厚。优化侧侧氮化硅(SIN_X)抗反射涂层以匹配相应的钝化和光学要求。最后,通过常规丝网印刷和优化的烧制来制造所有细胞。平均电池效率达到22.83%,最高效率高达23.15%。

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