A comparative variability analysis for CMOS and CNFET 6T SRAM cells

机译：CMOS和CNFET 6T SRAM单元的比较变异性分析

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Statistical device variability may be a limiting factor for further miniaturizing nodes in silicon bulk CMOS technology. On the other hand, in novel technologies such as Carbon Nanotubes Field Effect Transistors (CNFETs), the device variability is also present and is mainly due to imperfections inherent in current carbon nanotube (CNT) growth methods. The goal of this paper is to evaluate the impact of the main sources of variability in conventional MOSFET and CNFET 6T SRAM cells through the consideration of random threshold voltage process variations.

机译：统计设备的可变性可能是使硅块CMOS技术中的节点进一步小型化的限制因素。另一方面，在诸如碳纳米管场效应晶体管（CNFET）的新技术中，器件的可变性也存在，并且主要归因于当前碳纳米管（CNT）生长方法固有的缺陷。本文的目的是通过考虑随机阈值电压工艺变化来评估传统MOSFET和CNFET 6T SRAM单元中主要变化源的影响。

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《The 54th IEEE International Midwest Symposium on Circuits and Systems》|2011年|p.1-4|共4页
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Almudever Carmen G.; Rubio Antonio;
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中图分类基本电子电路;
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A comparative variability analysis for CMOS and CNFET 6T SRAM cells

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