A comparative variability analysis for CMOS and CNFET 6T SRAM cells

机译：CMOS和CNFET 6T SRAM细胞的比较可变性分析

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Statistical device variability may be a limiting factor for further miniaturizing nodes in silicon bulk CMOS technology. On the other hand, in novel technologies such as Carbon Nanotubes Field Effect Transistors (CNFETs), the device variability is also present and is mainly due to imperfections inherent in current carbon nanotube (CNT) growth methods. The goal of this paper is to evaluate the impact of the main sources of variability in conventional MOSFET and CNFET 6T SRAM cells through the consideration of random threshold voltage process variations.

机译：统计装置可变性可以是硅散装CMOS技术中进一步小型化节点的限制因素。另一方面，在诸如碳纳米管场效应晶体管（CNFET）的新技术中，还存在装置变异性，主要是由于当前碳纳米管（CNT）生长方法固有的缺陷症。本文的目标是通过考虑随机阈值电压过程变化来评估传统MOSFET和CNFET 6T SRAM细胞中的主要变异来源的影响。

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《IEEE International Midwest Symposium on Circuits and Systems》|2011年||共4页
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Almudever Carmen G.; Rubio Antonio;
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6. A comparative variability analysis for CMOS and CNFET 6T SRAM cells [C] . Almudever Carmen G., Rubio Antonio The 54th IEEE International Midwest Symposium on Circuits and Systems . 2011

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A comparative variability analysis for CMOS and CNFET 6T SRAM cells

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