首页> 外文会议>2011 IEEE 57th Holm Conference on Electrical Contacts >Correlation of Intrinsic Thin Film Stress Evolution and IMC Growth with Whisker Growth
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Correlation of Intrinsic Thin Film Stress Evolution and IMC Growth with Whisker Growth

机译:本征薄膜应力演化和IMC生长与晶须生长的相关性

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This paper explores the notion that the nucleation and growth of Sn whiskers is motivated by net compressive intrinsic thin film stresses. In this view, a threshold level of stress should exist at which Sn whiskers nucleate; furthermore, whiskering will relieve the compressive stress by a measurable amount. We examine the threshold stress for whisker nucleation and measure the amount of stress relieved during Sn whisker growth on brass substrates. The stress evolution has been evaluated by traditional bent beam analysis via novel machine vision techniques. Whisker nucleation and growth of the Cu-Sn intermetallic layer was observed by FIB sectioning, EDX mapping, and electron microscopy. Results show that the measured stress evolution shows little correlation to whisker nucleation and intermetallic growth. Further, we observe whisker population densities under both compressive and near neutral thin film stress conditions.
机译:本文探讨了锡晶须的形核和生长是由净压缩固有薄膜应力引起的。根据这种观点,锡晶须成核的应力阈值水平应存在。此外,晶须将减轻可压缩量。我们检查晶须形核的阈值应力,并测量在黄铜基板上锡晶须生长期间释放的应力量。应力的发展已经通过新颖的机器视觉技术通过传统的弯曲梁分析进行了评估。通过FIB切片,EDX测绘和电子显微镜观察到晶须形核和Cu-Sn金属间化合物层的生长。结果表明,测得的应力演变与晶须形核和金属间化合物的生长几乎没有关系。此外,我们在压缩和接近中性的薄膜应力条件下都观察到晶须的密度。

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