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首页> 外文会议>International conference on advanced materials research >Investigation of Deposition Parameter Effects on Energy Bandgap of Silicon Thin Film Prepared by Plasma Enhanced Chemical Vapor Deposition via Factorial Experiment
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Investigation of Deposition Parameter Effects on Energy Bandgap of Silicon Thin Film Prepared by Plasma Enhanced Chemical Vapor Deposition via Factorial Experiment

机译：析因实验研究沉积参数对等离子增强化学气相沉积制备硅薄膜能带隙的影响

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The energy bandgap(Eg)of silicon thin film prepared by plasma enhanced chemical vapor deposition(PECVD) is greatly dependent on the deposition conditions.Although the influence of some deposition parameters on Eg has been studied individually,it is still not clear which parameter plays the most important role.Here,a 5-factor 5-level factorial experiment was designed and carried out for the deposition parameters: the flow rate of SiH4,the flow rate of H2,the plasma power,the total gas pressure,and the substrate temperature.By making main effect analysis to the influences of such 5 factors on Eg,not only the influence of each deposition parameter was obtained,but also the most critical parameters were selected out.It was found that the gas flow rate of SiH4 and the total gas pressure played the most important roles on determining Eg of silicon thin film.That is to say,in order to obtain an expected Eg for Si thin film prepared by PECVD,much attention should be paid to optimize the two parameters.However,other parameters,including the H2 flow rate,the plasma power and the substrate temperature,can be set as default values according to the experience.Thus,the optimization workload can be reduced greatly.
机译：等离子体增强化学气相沉积（PECVD）制备的硅薄膜的能带隙（Eg）在很大程度上取决于沉积条件。尽管已经个别研究了一些沉积参数对Eg的影响，但尚不清楚哪个参数起着作用。最重要的作用。在此，针对沉积参数：SiH4流量，H2流量，等离子功率，总气压和基板，设计并进行了五因素五级析因实验。通过对这5个因素对Eg的影响进行主效应分析，不仅获得了各个沉积参数的影响，还选择了最关键的参数。总气压在确定硅薄膜的Eg方面起着最重要的作用。也就是说，为了获得预期的PECVD制备的Si薄膜的Eg，应特别注意优化这两个参数。但是，可以根据经验将包括H2流量，等离子功率和基板温度在内的其他参数设置为默认值。因此，可以大大减少优化工作量。

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