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Interaction of high intensity optical pulses with modified nonlinear GaSe crystals

机译：高强度光脉冲与改性非线性Gase晶体的相互作用

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The modified Bridgman method with heat field rotation was used to grow e-polytype single crystals of pure and 1, 2 and 10 mass % S-doped GaSe or solid solution crystals GaSe_(1-2)S_x, x = 0.002, 0.091, 0.412. The interaction of ultrashort laser pulses of ～ 100 fs duration at 800 nm and 2 μm with the grown crystals was studied at room temperature. Up to 3.4-fold advantage of S-doped crystals in limit pump intensity (no decrease in the transmission) was found under 800 nm pump at S-content increase up to 10 mass %. The advantage became a half less at 2 μm pump due to a decrease of two-photon absorption in pure GaSe crystals. The spectral dependence of transient absorption is recorded with 37 fs resolution and interpreted. It was ascertained that first observable damage of high quality crystals is caused by dissociation of sub-micrometer thick surface layer to initial elements and do not influence the frequency conversion efficiency until alloying of dissociated Ga. Local microdefects, multiphoton absorption and transient transmission processes are identified as key factors responsible for damage threshold.
机译：具有热场旋转的改性的Bridgman方法用于生长纯和1,2和10质量％S掺杂Gase或固溶液体Gase_（1-2）S_x，X = 0.002,0.091,0.412的E-聚卵型单晶。在室温下，研究了用生长的晶体在800nm和2μm处的〜100 fs持续时间的超短激光脉冲的相互作用。在800nm泵下，在S含量增加到10质量％的800 nm泵下，S掺杂晶体的浓度高达3.4倍以下的优点在800nm泵下发现了高达10质量％。由于纯Gase晶体中的双光子吸收降低，优点在2μm泵中变得较小。瞬态吸收的光谱依赖性记录37 FS分辨率并解释。确定它是首先可观察到的高质量晶体的损坏是由亚微米厚表面层的解离到初始元件引起的，并且不会影响频率转换效率，直到对解离GA的合金化。局部微碎片，多光子吸收和瞬态传输过程识别作为负责损伤阈值的关键因素。

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