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首页> 外文会议>IEEE International Conference on Nano/Micro Engineered and Molecular Systems >Multi-sensor diode for magnetic field and photo detection
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Multi-sensor diode for magnetic field and photo detection

机译：用于磁场和照片检测的多传感器二极管

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This research presents the multi-sensor that can detect both magnetic field and photo in the one device. The structure is based on p-n junction diode that is the fundamental of light detecting. The idea is how to design p-n junction for magnetic field. The dual magneto diode structure is a solution. It is designed to be suitable for these purposes. The device is specially designed and simulation by Sentaurus TCAD. It is fabricated by standard CMOS process and measured the responses of magnetic field and light. It shows a good device that detects two types of energy equally well. The relative sensitivity of magnetic response is 57 mT at forward bias 1 mA and 128 mT at reverse 8 nA. The dark current of device is 7.34 mA at standard test condition (25°C, AM 1.5, 100 W/m2). It is current mode device generating photo current and cathode current difference that is linearly induced from magnetic field.
机译：本研究介绍了可以在一个设备中检测磁场和照片的多传感器。该结构基于P-N结二极管，这是光检测的基础。这个想法是如何为磁场设计P-n结。双磁二极管结构是一种溶液。它的设计适合于这些目的。该设备由Sentaurus TCAD专门设计和仿真。它由标准CMOS工艺制造，并测量磁场和光的响应。它显示了一个良好的设备，可均匀地检测两种类型的能量。磁响应的相对敏感性在正向偏压1mA和反向8A处的128mt处为57mt。标准试验条件（25°C，1.5,100 w / m 2），设备的暗电流为7.34 mA。它是产生从磁场线性诱导的光电流和阴极电流差的电流模式装置。

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